Institution
Sungkyunkwan University
Education•Seoul, South Korea•
About: Sungkyunkwan University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Thin film & Graphene. The organization has 28229 authors who have published 56428 publications receiving 1352733 citations. The organization is also known as: 성균관대학교.
Topics: Thin film, Graphene, Population, Catalysis, Layer (electronics)
Papers published on a yearly basis
Papers
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482 citations
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TL;DR: The high capacitance, high energy density, and power density of the coaxial fiber supercapacitor are attributed to not only high effective surface area due to its coaxial structure and bundle of the core electrode, but also all-carbon materials electrodes which have high conductivity.
Abstract: We report a coaxial fiber supercapacitor, which consists of carbon microfiber bundles coated with multiwalled carbon nanotubes as a core electrode and carbon nanofiber paper as an outer electrode. The ratio of electrode volumes was determined by a half-cell test of each electrode. The capacitance reached 6.3 mF cm–1 (86.8 mF cm–2) at a core electrode diameter of 230 μm and the measured energy density was 0.7 μWh cm–1 (9.8 μWh cm–2) at a power density of 13.7 μW cm–1 (189.4 μW cm–2), which were much higher than the previous reports. The change in the cyclic voltammetry characteristics was negligible at 180° bending, with excellent cycling performance. The high capacitance, high energy density, and power density of the coaxial fiber supercapacitor are attributed to not only high effective surface area due to its coaxial structure and bundle of the core electrode, but also all-carbon materials electrodes which have high conductivity. Our coaxial fiber supercapacitor can promote the development of textile ele...
481 citations
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TL;DR: Galvanic replacement reactions provide a simple and versatile route for producing hollow nanostructures with controllable pore structures and compositions and were demonstrated in metal oxide nanocrystals as well.
Abstract: Galvanic replacement reactions provide a simple and versatile route for producing hollow nanostructures with controllable pore structures and compositions. However, these reactions have previously been limited to the chemical transformation of metallic nanostructures. We demonstrated galvanic replacement reactions in metal oxide nanocrystals as well. When manganese oxide (Mn3O4) nanocrystals were reacted with iron(II) perchlorate, hollow box-shaped nanocrystals of Mn3O4/γ-Fe2O3 ("nanoboxes") were produced. These nanoboxes ultimately transformed into hollow cagelike nanocrystals of γ-Fe2O3 ("nanocages"). Because of their nonequilibrium compositions and hollow structures, these nanoboxes and nanocages exhibited good performance as anode materials for lithium ion batteries. The generality of this approach was demonstrated with other metal pairs, including Co3O4/SnO2 and Mn3O4/SnO2.
481 citations
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University of Oklahoma1, European Institute of Oncology2, Sungkyunkwan University3, Hebron University4, University of New South Wales5, University of Bordeaux6, University of Paris-Sud7, Netherlands Cancer Institute8, University of Edinburgh9, University of Toronto10, University of Texas MD Anderson Cancer Center11, Memorial Sloan Kettering Cancer Center12, Medical College of Wisconsin13, Harvard University14, AstraZeneca15
TL;DR: Standard-of-care therapy for patients newly diagnosed with advanced ovarian cancer consists of frontline cytoreductive surgery and adjuvant platinum chemotherapy and approximately 70% of patients have a relapse within 3 years.
Abstract: (ed from N Engl J Med 2018;379:2495–2505)Standard-of-care therapy for patients newly diagnosed with advanced ovarian cancer consists of frontline cytoreductive surgery and adjuvant platinum chemotherapy. Approximately 70% of these patients have a relapse within 3 years.
481 citations
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TL;DR: The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping, and the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly (dG)-poly (dC) behavesAs a p-type silicon semiconductor.
Abstract: We report direct measurements of electrical transport through poly(dA)-poly(dT) and poly(dG)-poly(dC) DNA molecules containing identical base pairs. The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping. We have also investigated the effect of gate voltage on the current-voltage curve. It demonstrates the possibility of a DNA field-effect transistor operating at room temperature. Moreover, the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly(dG)-poly(dC) behaves as a p-type semiconductor.
480 citations
Authors
Showing all 28506 results
Name | H-index | Papers | Citations |
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Michael Grätzel | 248 | 1423 | 303599 |
Hyun-Chul Kim | 176 | 4076 | 183227 |
Yongsun Kim | 156 | 2588 | 145619 |
David J. Mooney | 156 | 695 | 94172 |
Jongmin Lee | 150 | 2257 | 134772 |
Byung-Sik Hong | 146 | 1557 | 105696 |
Inkyu Park | 144 | 1767 | 109433 |
Y. Choi | 141 | 1631 | 98709 |
Kazunori Kataoka | 138 | 908 | 70412 |
E. J. Corey | 136 | 1377 | 84110 |
Pasi A. Jänne | 136 | 685 | 89488 |
Suyong Choi | 135 | 1495 | 97053 |
Intae Yu | 134 | 1372 | 89870 |
Tae Jeong Kim | 132 | 1420 | 93959 |
Anders Hagfeldt | 129 | 600 | 79912 |