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Institution

Sungkyunkwan University

EducationSeoul, South Korea
About: Sungkyunkwan University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Thin film & Graphene. The organization has 28229 authors who have published 56428 publications receiving 1352733 citations. The organization is also known as: 성균관대학교.


Papers
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Journal ArticleDOI
06 Jun 2013-ACS Nano
TL;DR: The high capacitance, high energy density, and power density of the coaxial fiber supercapacitor are attributed to not only high effective surface area due to its coaxial structure and bundle of the core electrode, but also all-carbon materials electrodes which have high conductivity.
Abstract: We report a coaxial fiber supercapacitor, which consists of carbon microfiber bundles coated with multiwalled carbon nanotubes as a core electrode and carbon nanofiber paper as an outer electrode. The ratio of electrode volumes was determined by a half-cell test of each electrode. The capacitance reached 6.3 mF cm–1 (86.8 mF cm–2) at a core electrode diameter of 230 μm and the measured energy density was 0.7 μWh cm–1 (9.8 μWh cm–2) at a power density of 13.7 μW cm–1 (189.4 μW cm–2), which were much higher than the previous reports. The change in the cyclic voltammetry characteristics was negligible at 180° bending, with excellent cycling performance. The high capacitance, high energy density, and power density of the coaxial fiber supercapacitor are attributed to not only high effective surface area due to its coaxial structure and bundle of the core electrode, but also all-carbon materials electrodes which have high conductivity. Our coaxial fiber supercapacitor can promote the development of textile ele...

481 citations

Journal ArticleDOI
24 May 2013-Science
TL;DR: Galvanic replacement reactions provide a simple and versatile route for producing hollow nanostructures with controllable pore structures and compositions and were demonstrated in metal oxide nanocrystals as well.
Abstract: Galvanic replacement reactions provide a simple and versatile route for producing hollow nanostructures with controllable pore structures and compositions. However, these reactions have previously been limited to the chemical transformation of metallic nanostructures. We demonstrated galvanic replacement reactions in metal oxide nanocrystals as well. When manganese oxide (Mn3O4) nanocrystals were reacted with iron(II) perchlorate, hollow box-shaped nanocrystals of Mn3O4/γ-Fe2O3 ("nanoboxes") were produced. These nanoboxes ultimately transformed into hollow cagelike nanocrystals of γ-Fe2O3 ("nanocages"). Because of their nonequilibrium compositions and hollow structures, these nanoboxes and nanocages exhibited good performance as anode materials for lithium ion batteries. The generality of this approach was demonstrated with other metal pairs, including Co3O4/SnO2 and Mn3O4/SnO2.

481 citations

Journal ArticleDOI
TL;DR: Standard-of-care therapy for patients newly diagnosed with advanced ovarian cancer consists of frontline cytoreductive surgery and adjuvant platinum chemotherapy and approximately 70% of patients have a relapse within 3 years.
Abstract: (ed from N Engl J Med 2018;379:2495–2505)Standard-of-care therapy for patients newly diagnosed with advanced ovarian cancer consists of frontline cytoreductive surgery and adjuvant platinum chemotherapy. Approximately 70% of these patients have a relapse within 3 years.

481 citations

Journal ArticleDOI
TL;DR: The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping, and the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly (dG)-poly (dC) behavesAs a p-type silicon semiconductor.
Abstract: We report direct measurements of electrical transport through poly(dA)-poly(dT) and poly(dG)-poly(dC) DNA molecules containing identical base pairs. The observed experimental results suggest that electrical transport through DNA molecules occurs by polaron hopping. We have also investigated the effect of gate voltage on the current-voltage curve. It demonstrates the possibility of a DNA field-effect transistor operating at room temperature. Moreover, the gate-voltage dependent transport measurements show that poly(dA)-poly(dT) behaves as an n-type semiconductor, whereas poly(dG)-poly(dC) behaves as a p-type semiconductor.

480 citations


Authors

Showing all 28506 results

NameH-indexPapersCitations
Michael Grätzel2481423303599
Hyun-Chul Kim1764076183227
Yongsun Kim1562588145619
David J. Mooney15669594172
Jongmin Lee1502257134772
Byung-Sik Hong1461557105696
Inkyu Park1441767109433
Y. Choi141163198709
Kazunori Kataoka13890870412
E. J. Corey136137784110
Pasi A. Jänne13668589488
Suyong Choi135149597053
Intae Yu134137289870
Tae Jeong Kim132142093959
Anders Hagfeldt12960079912
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023103
2022588
20214,342
20204,248
20194,124
20183,826