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Institution

Sungkyunkwan University

EducationSeoul, South Korea
About: Sungkyunkwan University is a education organization based out in Seoul, South Korea. It is known for research contribution in the topics: Thin film & Graphene. The organization has 28229 authors who have published 56428 publications receiving 1352733 citations. The organization is also known as: 성균관대학교.


Papers
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Journal ArticleDOI
TL;DR: This work demonstrates a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values and a ternary inverter as a multi-valued logic application.
Abstract: Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

302 citations

Journal ArticleDOI
16 Nov 2018-Science
TL;DR: A method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition is reported, which allows for the synthesis of wower-scale graphene/hBN heterostructure and single- Crystalline tungsten disulfide.
Abstract: Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.

302 citations

Journal ArticleDOI
01 Apr 2014-ACS Nano
TL;DR: Surprisingly, even when the film thickness of the VArGO electrode was increased, its volumetric and areal capacitances were maintained, and this results in a simple method to fabricate highly dense and vertically aligned reduced graphene oxide (VArGO) electrodes involving simple hand-rolling and cutting processes.
Abstract: Supercapacitors with porous carbon structures have high energy storage capacity. However, the porous nature of the carbon electrode, composed mainly of carbon nanotubes (CNTs) and graphene oxide (GO) derivatives, negatively impacts the volumetric electrochemical characteristics of the supercapacitors because of poor packing density (<0.5 g cm–3). Herein, we report a simple method to fabricate highly dense and vertically aligned reduced graphene oxide (VArGO) electrodes involving simple hand-rolling and cutting processes. Because of their vertically aligned and opened-edge graphene structure, VArGO electrodes displayed high packing density and highly efficient volumetric and areal electrochemical characteristics, very fast electrolyte ion diffusion with rectangular CV curves even at a high scan rate (20 V/s), and the highest volumetric capacitance among known rGO electrodes. Surprisingly, even when the film thickness of the VArGO electrode was increased, its volumetric and areal capacitances were maintained.

301 citations

Journal ArticleDOI
TL;DR: G-CHOP did not improve progression-free survival compared with R-CHop in patients with previously untreated DLBCL, and biomarker analyses may help define a future role for G inDLBCL.
Abstract: PurposeRituximab (R) plus CHOP (cyclophosphamide, doxorubicin, vincristine, prednisone) chemotherapy is the standard of care in previously untreated diffuse large B-cell lymphoma (DLBCL). Obinutuzumab (G) is a glycoengineered, type II, anti-CD20 monoclonal antibody. GOYA was a randomized phase III study that compared G-CHOP with R-CHOP in patients with previously untreated advanced-stage DLBCL.MethodsPatients (N = 1,418) were randomly assigned to receive eight 21-day cycles of G (n = 706) or R (n = 712), plus six or eight cycles of CHOP. Primary end point was investigator-assessed progression-free survival (PFS).ResultsAfter median observation of 29 months, the number of investigator-assessed PFS events was similar between G (201; 28.5%) and R (215; 30.2%), stratified hazard ratio was 0.92 (95% CI, 0.76 to 1.11; P = .39), and 3-year PFS rates were 70% and 67%, respectively. Secondary end points of independently reviewed PFS, other time-to-event end points, and tumor response rates were similar between arm...

300 citations

Journal ArticleDOI
TL;DR: In this paper, a search for events with jets and missing transverse energy is performed in a data sample of pp collisions collected at 7 TeV by the CMS experiment at the LHC.
Abstract: A search for events with jets and missing transverse energy is performed in a data sample of pp collisions collected at sqrt(s) = 7 TeV by the CMS experiment at the LHC. The analyzed data sample corresponds to an integrated luminosity of 1.14 inverse femtobarns. In this search, a kinematic variable, alphaT, is used as the main discriminator between events with genuine and misreconstructed missing transverse energy. No excess of events over the standard model expectation is found. Exclusion limits in the parameter space of the constrained minimal supersymmetric extension of the standard model are set. In this model, squark masses below 1.1 TeV are excluded at 95% CL. Gluino masses below 1.1 TeV are also ruled out at 95% CL for values of the universal scalar mass parameter below 500 GeV.

300 citations


Authors

Showing all 28506 results

NameH-indexPapersCitations
Michael Grätzel2481423303599
Hyun-Chul Kim1764076183227
Yongsun Kim1562588145619
David J. Mooney15669594172
Jongmin Lee1502257134772
Byung-Sik Hong1461557105696
Inkyu Park1441767109433
Y. Choi141163198709
Kazunori Kataoka13890870412
E. J. Corey136137784110
Pasi A. Jänne13668589488
Suyong Choi135149597053
Intae Yu134137289870
Tae Jeong Kim132142093959
Anders Hagfeldt12960079912
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023103
2022588
20214,342
20204,248
20194,124
20183,826