Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Position-selective metal oxide nano-structures using graphene catalyst for gas sensors
Aram Lee,Jinheon Park,Kyoung Soon Choi,Jouhahn Lee,Il-Han Yoo,In Sun Cho,Byungmin Ahn,Hyungtak Seo,Jae-Young Choi,Hak Ki Yu +9 more
TL;DR: In this paper, the thermal transport growth of various metal oxide (MOx) nanostructures using graphene as a catalytic layer was studied for hydrogen gas sensor applications, where different responses were obtained with hydrogen molecules.
Proceedings ArticleDOI
Recent advances in high speed silicon optical modulator
Ansheng Liu,Ling Liao,Doron Rubin,Hat Nguyen,Berkehan Ciftcioglu,Yoel Chetrit,Rami Cohen,Nahum Izhaky,Juthika Basak,Mario J. Paniccia +9 more
TL;DR: In this paper, a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect is presented, which is one of key components for integrated silicon photonic chip aiming at Tb/s data transmission for next generation communication networks as well as future high performance computing applications.
Proceedings ArticleDOI
A hybrid silicon evanescent electroabsorption modulator
TL;DR: In this article, a hybrid silicon evanescent electroabsorption modulator with offset AlGalnAs quantum wells has an extinction ratio over 10 dB and modulation bandwidth over 16 GHz.
Journal ArticleDOI
Digital building blocks for controlling random waves based on supersymmetry
TL;DR: In this article, supersymmetric transformations of any parity-symmetric potential derive the parity reversal of all eigenmodes, which allows the complete isolation of random waves at the 'off' state.
Journal ArticleDOI
Silicon Photonics: A Review
TL;DR: This paper reviews the growth of silicon photonics compared to last few years and a promising future of photonics and compatibility of silicon Photonics with CMOS fabrication offers great advantages, such as low cost, high volume integration.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).