Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)
Ying Luo,Xuezhe Zheng,Guoliang Li,Ivan Shubin,Hiren D. Thacker,Jin Yao,Jin-Hyoung Lee,Dazeng Feng,Joan Fong,Cheng-Chih Kung,Shirong Liao,Roshanak Shafiiha,Mehdi Asghari,Kannan Raj,Ashok V. Krishnamoorthy,John E. Cunningham +15 more
TL;DR: Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content, and optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics.
Journal ArticleDOI
Integrated micro- and nanophotonic dynamic devices: a review
TL;DR: This review paper deals with a large variety of components and focuses mainly on modulators, which perform a role that is similar to the role of microelectronic transistors, while acting as the first evolution phase towards fully integrated lightwave processing circuits.
Proceedings ArticleDOI
Compact Electro-Optic Modulator on Silicon-on-Insulator Substrates Using Cavities with Ultra-Small Modal Volumes
TL;DR: An electro-optic modulator is experimentally demonstrate using a high-index-contrast silicon Fabry-Perot resonator to demonstrate a 1-D integrated cavity with an embedded p-i-n junction on a silicon-on-insulator platform.
Journal ArticleDOI
Integrated Hybrid Silicon Transmitters
TL;DR: Using ion implantation enhanced quantum well intermixing, four band gaps are integrated on a single chip and used to demonstrate a DFB laser-EAM array in this paper, where the latest results on design changes to improve Mach-Zender and EA modulator performance are also described and the prospects for fabricating an integrated terabit per second transmitter on silicon are presented.
Journal ArticleDOI
Engineering third-order optical nonlinearities in hybrid chalcogenide-on-silicon platform.
Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Christian Lafforgue,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien +9 more
TL;DR: These waveguides largely satisfy the critical criterion for efficient nonlinear integrated photonics (FOMTPAwg>1), allowing phase shifts greater than π with minimal overall losses, and pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).