Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Direct monitoring of the excited state population in biased SiGe valence band quantum wells by femtosecond resolved photocurrent experiments
Patrick Rauter,Thomas Fromherz,Gerrit E. W. Bauer,Nguyen Q. Vinh,B. N. Murdin,J. Phillips,C. R. Pidgeon,Laurent Diehl,G. Dehlinger,Detlev Grützmacher +9 more
TL;DR: In this article, the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser.
Patent
Method and apparatus for optical modulation
Yurii A. Vlasov,Fengnian Xia +1 more
TL;DR: In this article, a method and an apparatus for optical modulation, for example for use in optical communications links, is presented. But this method is not suitable for the use of wireless communications.
Journal ArticleDOI
Graphene-based silicon modulators
TL;DR: Graphene-based silicon modulator, which benefits from the excellent optical properties of the two-dimensional graphene material with its unique band structure, has significantly advanced the above critical figures of merit.
Journal ArticleDOI
Attojoule-Efficient Graphene Optical Modulators
Rubab Amin,Zhizhen Ma,Rishi Maiti,Sikandar Khan,Jacob B. Khurgin,Hamed Dalir,Volker J. Sorger +6 more
TL;DR: In this article, the authors discuss the physics and performance of graphene-based devices heterogeneously integrated and provide a holistic analysis of the underlying physics of modulators including the graphenes index tunability, the underlying optical mode, and the resulting performance vectors of this novel class of hybrid modulators.
Journal ArticleDOI
White light emission from heterojunction diodes based on surface-oxidized porous Si nanowire arrays and amorphous In-Ga-Zn-O capping
TL;DR: A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).