Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices
Alexandros Emboras,Adel Najar,Siddharth Nambiar,Philippe Grosse,E. Augendre,Charles Leroux,Barbara de Salvo,Roch Espiau de Lamaestre +7 more
TL;DR: It is shown that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal.
Journal ArticleDOI
Nonlinear Fabry-Perot resonator with a silicon photonic crystal waveguide
Kazuhiro Ikeda,Yeshaiahu Fainman +1 more
TL;DR: An equation that describes the nonlinear operation of a Fabry-Perot resonator with a large group index waveguide with a silicon photonic crystal microcavity with two-photon-excited free carrier non linearity and Kerr nonlinearity is derived.
Journal ArticleDOI
All-Optical Modulation in Chains of Silicon Nanoantennas
Lu Ding,Dmitry Morits,Reuben M. Bakker,Shiqiang Li,Damien Eschimese,Shiyang Zhu,Ye Feng Yu,Ramón Paniagua-Domínguez,Arseniy I. Kuznetsov +8 more
TL;DR: Coupled nanoantennas as discussed by the authors can guide light on a chip over large distances w.r.t. dielectric nanophotonics that allow efficient control of light scattering at nanoscale.
Journal ArticleDOI
Heterogeneous silicon light sources for datacom applications
Di Liang,Geza Kurczveil,Xue Huang,Chong Zhang,Sudharsanan Srinivasan,Zhihong Huang,M. Ashkan Seyedi,Kate J. Norris,Marco Fiorentino,John E. Bowers,Raymond G. Beausoleil +10 more
TL;DR: Advanced quantum dot material is now successfully implemented in the heterogeneous platform to serve as the robust optical gain medium in a comb laser to deliver multiple low relative intensity noise (RIN) lasing wavelengths and seamlessly integrate with Si photonic circuits for dense wavelength-division multiplexing (DWDM) photonic interconnect architecture.
Journal ArticleDOI
Experimental demonstration of a reconfigurable electro-optic directed logic circuit using cascaded carrier-injection micro-ring resonators
Yonghui Tian,Zilong Liu,Huifu Xiao,Zhao Guolin,Guipeng Liu,Jianhong Yang,Jianfeng Ding,Lei Zhang,Lin Yang +8 more
TL;DR: A reconfigurable electro-optic directed logic circuit which can perform any combinatorial logic operation using cascaded carrier-injection micro-ring resonators (MRRs), and the logic circuit is fabricated on the silicon-on-insulator substrate with the standard commercial Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).