Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
A graphene-based broadband optical modulator
Ming Liu,Xiaobo Yin,Erick Ulin-Avila,Baisong Geng,Thomas Zentgraf,Long Ju,Feng Wang,Feng Wang,Xiang Zhang,Xiang Zhang +9 more
TL;DR: Graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
Journal ArticleDOI
Micrometre-scale silicon electro-optic modulator
TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Journal ArticleDOI
Silicon optical modulators
TL;DR: The techniques that have, and will, be used to implement silicon optical modulators, as well as the outlook for these devices, and the candidate solutions of the future are discussed.
Journal ArticleDOI
The Past, Present, and Future of Silicon Photonics
TL;DR: In this paper, the state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA).
Journal ArticleDOI
All-optical control of light on a silicon chip
TL;DR: The experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index and confirm the recent theoretical prediction of efficient optical switching in silicon using resonant structures.
References
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Journal ArticleDOI
All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
Richard A. Soref,J. Larenzo +1 more
TL;DR: In this paper, an end-coupled planar and channel waveguides at 1.3 μm have been demonstrated in single-crystal Si layers grown epitaxially on heavily doped Si substrates, and an optical power divider consisting of intersecting channels was designed and fabricated.
Journal ArticleDOI
CMOS scaling for high performance and low power-the next ten years
TL;DR: In this article, a guideline for scaling of CMOS technology for logic applications such as microprocessors is presented covering the next ten years, assuming that the lithography and base process development driven by DRAM continues on the same three-year cycle as in the past.
Journal ArticleDOI
Numerical methods for semiconductor device simulation
TL;DR: This paper describes the numerical techniques used to solve the coupled system of nonlinear partial differential equations which model semiconductor devices, and the efficient solution of the resulting nonlinear and linear algebraic equations.
Proceedings ArticleDOI
Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon
TL;DR: In this paper, a low-loss guided-wave electro-optical phase modulation structure in c-Si was proposed and compared to those for GaAs and InP, and the magnitude of these effects has been calculated.
Journal ArticleDOI
Highly efficient optical phase modulator in SOI waveguides
C.K. Tang,Graham T. Reed +1 more
TL;DR: In this article, a low-loss, highly efficient, single-mode optical phase modulator in SOI is reported, and the induced phase shift per volt per millimetre, is greater than 200 degrees /V/mm.