Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Silicon–Organic and Plasmonic–Organic Hybrid Photonics
Wolfgang Heni,Yasar Kutuvantavida,Christian Haffner,Heiner Zwickel,Clemens Kieninger,Stefan Wolf,Matthais Lauermann,Yuriy Fedoryshyn,Andreas F. Tillack,Lewis E. Johnson,Delwin L. Elder,Bruce H. Robinson,Wolfgang Freude,Christian Koos,Juerg Leuthold,Larry R. Dalton +15 more
TL;DR: In this paper, a review focusing on a hybrid material approach illustrating the importance of both chemical and engineering concepts is presented, focusing on chip-scale integration of electronics and photonics is recognized as important to the future of information technology, as is the exploitation of the best properties of electronics, photonics and plasmonics to achieve this objective.
Journal ArticleDOI
Wide temperature range operation of micrometer-scale silicon electro-optic modulators.
Sasikanth Manipatruni,Rajeev K. Dokania,Bradley S. Schmidt,Nicolás Sherwood-Droz,Carl B. Poitras,Alyssa B. Apsel,Michal Lipson +6 more
TL;DR: High bit rate electro-optic modulation in a resonant micrometer-scale silicon modulator over an ambient temperature range of 15 K is demonstrated and low bit error rates can be achieved by varying the bias current through the device to thermally counteract the ambient temperature changes.
Journal ArticleDOI
Ultra-low voltage, ultra-small mode volume silicon microring modulator
TL;DR: The presented approach lays the ground work for a new class of high speed low voltage modulators enabling, seamless integration of nanophotonics with low voltage digital CMOS nano-electronics.
Journal ArticleDOI
On-chip silicon photonic signaling and processing: a review
Jian Wang,Yun Long +1 more
TL;DR: The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip.
Journal ArticleDOI
Germanium avalanche receiver for low power interconnects.
Léopold Virot,Paul Crozat,Jean-Marc Fedeli,Jean-Michel Hartmann,Delphine Marris-Morini,Eric Cassan,Frederic Boeuf,Laurent Vivien +7 more
TL;DR: A 10 Gbit per second waveguide avalanche germanium photodiode under low reverse bias is reported, paving the way for low-power-consumption on-chip communication applications.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).