Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Proceedings ArticleDOI
Prospects for Wafer-Level Testing of Gigascale Chips with Electrical and Optical I/O Interconnects
Hiren D. Thacker,James D. Meindl +1 more
TL;DR: The issues related to testing of Gigascale chips with high-bandwidth, integrated optoelectronic components during high-volume manufacturing are identified and a probe substrate to enable the same is demonstrated.
Proceedings ArticleDOI
High-speed electro-optical silicon modulators based on photonic crystal waveguides
TL;DR: An ultra-compact silicon Mach-Zehnder interferometer (MZI) modulator featuring p-i-n-diode-embedded photonic crystal waveguides has been fabricated in this paper.
Journal ArticleDOI
Novel optical modulator using silicon photonic crystals
TL;DR: In this paper, a novel compact and integrated optical modulator, which consists of p-i-n silicon photonic crystals with triangular lattice and a line defect waveguide, was proposed.
Proceedings ArticleDOI
First experimental bit-error-rate validation of 12.5-Gb/s silicon modulator enabling photonic networks-on-chip
TL;DR: Error-free 12.5-Gb/s operation of silicon microring resonator electro-optic modulator is experimentally demonstrated in this paper, with bit-error-rate and power penalty performance metrics measured using system-level comparative analysis for varying modulation rates.
Book ChapterDOI
Optical Interconnects for Green Computers and Data Centers
TL;DR: In this chapter, state-of-the-art optical interconnect technologies for supercomputers and data centers (DCs) are presented with optical devices and CMOS circuits, which are going to be fundamental building blocks of computer networks.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).