Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Proceedings ArticleDOI
Silicon-on-insulator tunable waveguide-coupled microdisk resonators with selectively integrated p-i-n diodes
Linjie Zhou,Andrew Wing On Poon +1 more
TL;DR: In this article, a design and analysis of compact silicon-on-insulator tunable waveguide-coupled microdisk resonators with selectively integrated p-i-n diodes is presented.
Posted Content
Nanoscale Plasmonic and Optical Modulators Based on Transparent Conducting Oxides
TL;DR: In this paper, a TCO-slot waveguide was proposed and explored, which combines both the tunable property of a transparent conducting oxide (TCO) and field enhancement of a slot waveguide.
Proceedings ArticleDOI
Tuning of 2D rod-type photonic crystal cavity for optical modulation and impact sensing
TL;DR: In this paper, the authors proposed a novel way of mechanical perturbation of photonic crystal cavities for on-chip applications. And they utilized the equivalence of the 2D photonic crystals with perfect electric conductor (PEC) boundary conditions to the infinite height 3D counterparts for rod type photonic structures.
Journal ArticleDOI
Ultra-compact electro-optical switches based on long-range air-hole assisted subwavelength waveguides
TL;DR: An ultra-compact electro-optical (EO) switch based on long-range air-hole assisted subwavelength waveguides with a high extinction ratio, low insertion loss, and high operation speed is proposed and investigated, both analytically and numerically as discussed by the authors.
Journal ArticleDOI
Parallel multi-step nanolithography by nanoscale Cu-covered h-PDMS tip array
Yuan-Jen Chang,Han-Kuan Huang +1 more
TL;DR: In this article, the dry etching of photoresist and electro-chemical machining was combined to reduce the size of the tip opening. And they successfully fabricated a tip opening with a diameter of 200 nm.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).