Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
On-chip optical interconnection using integrated germanium light emitters and photodetectors
TL;DR: In this paper, a monolithically integrated Ge light emitting diode (LED) that enables current injection at high density and a Ge photodiode (PD) having low dark current was developed.
Journal ArticleDOI
Experimental evidences of carrier distribution and behavior in frequency in a BMFET Modulator
TL;DR: In this paper, a method to monitor the carrier plasma distribution in a bipolar mode field effect transistor light modulator, using standard emission microscopy, was proposed. But the method was limited to the case of a single transistor and the experimental evidence of a frequency threshold in the electric field induced plasma distribution was not provided.
Proceedings ArticleDOI
Flexible Electronic-Optical Local Bus Modules to the Board-to-Board, Board-to-Chip, and Chip-to-Chip Optical Interconnection
Li-Cheng Shen,Wei-Chung Lo,Hsiang-Hung Chang,Huan-Chun Fu,Yuan-Chang Lee,Shu-Ming Chang,Yu-Chih Chen,Wun-Yan Chen +7 more
TL;DR: In this paper, a flexible active E/O local bus module using multi-mode optical transmission is proposed to perform board-to-board, chip-tochip, or boardto-chip optical interconnection with compatibility to traditionally electrical interfaces.
Journal ArticleDOI
Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer
Keisuke Shibuya,Kiyo Ishii,Yuki Atsumi,Tomoya Yoshida,Youichi Sakakibara,Masahiko Mori,Akihito Sawa +6 more
TL;DR: Investigation of the switching dynamics of optical modulators consisting of a Si waveguide with a VO2 cladding layer by utilizing the photothermal effect revealed that the temperature change in the first few micrometers of the VO2/Si waveguide governed the switching time.
Journal ArticleDOI
Silicon photonic dynamic optical channel leveler with external feedback loop
TL;DR: A dynamic optical channel leveler composed of a variable optical attenuator (VOA) integrated monolithically with a defect-mediated photodiode in a silicon photonic waveguide device and an external feedback loop to provide blind channel leveling.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).