Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
More filters
Journal ArticleDOI
Hybrid Silicon Photonics for Optical Interconnects
Martijn J. R. Heck,Hui-Wen Chen,Alexander W. Fang,Brian R. Koch,Di Liang,Hyundai Park,Matthew N. Sysak,John E. Bowers +7 more
TL;DR: In this paper, a III/V layer is bonded to a fully processed silicon-on-insulator wafer, and a complete high-speed optical interconnect can be realized on-chip.
Journal ArticleDOI
Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition
TL;DR: The integrated lithographically patterned VO2 thin films grown by pulsed laser deposition with silicon-on-insulator photonic waveguides are integrated to demonstrate a compact in-line absorption modulator for use in photonic circuits.
Journal ArticleDOI
Vertical junction silicon microdisk modulators and switches
TL;DR: Through the use of vertical junctions in resonant modulators, the lowest power consumption, lowest voltage, and smallest silicon modulators demonstrated to date are achieved.
Journal ArticleDOI
80-micron interaction length silicon photonic crystal waveguide modulator
TL;DR: In this paper, an ultracompact silicon electro-optic modulator was experimentally demonstrated based on silicon photonic crystal (PhC) waveguides for the first time to our knowledge.
Journal ArticleDOI
Optical modulator on silicon employing germanium quantum wells
Jonathan E. Roth,Onur Fidaner,Rebecca K. Schaevitz,Yu-Hsuan Kuo,Theodore I. Kamins,James S. Harris,David A. B. Miller +6 more
TL;DR: An electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers is demonstrated, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions.
References
More filters
Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).