Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
All-optical modulation based on silicon quantum dot doped SiOx: SI-QD waveguide
TL;DR: In this paper, an all-optical modulation based on silicon quantum dot doped SiOx:Si-QD waveguide is demonstrated, where the free-carrier absorption (FCA) cross section of Si-QDs is decreased to 8 × 10−18 cm2 by enlarging the electron/hole effective masses, which shortens the PL and Auger lifetime.
Journal ArticleDOI
2D Materials for Terahertz Modulation
Journal ArticleDOI
Fabrication of Metal–Semiconductor Nanowire Heterojunctions
TL;DR: Nanoscale sensors and switches for future electronics may take advantage of metal-semiconductor end-to-end nanowire contacts that can be made by simultaneous evaporation of In and SiO powders.
Journal ArticleDOI
Double-Slot Hybrid Plasmonic Ring Resonator Used for Optical Sensors and Modulators
TL;DR: An ultra-high sensitivity double-slot hybrid plasmonic (DSHP) ring resonator, used for optical sensors and modulators, is developed in this paper, where partial opening of the outer plasmoric circular sheet of the DSHP ring, a conventional sidecoupled silicon on insulator (SOI) bus waveguide can be used.
Journal ArticleDOI
Chip-Integrated Geometric Metasurface As a Novel Platform for Directional Coupling and Polarization Sorting by Spin–Orbit Interaction
TL;DR: In this paper, a chip-integrated metasurface can behave as a promising compact platform to control the propagation of guided waves when it is integrated with optical waveguide.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).