Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Microphotonic Elements for Integration on the Silicon-on-Insulator Waveguide Platform
Siegfried Janz,Pavel Cheben,Dan Dalacu,Andre Delage,Adam Densmore,Boris Lamontagne,Marie-Josée Picard,E. Post,Jens H. Schmid,Philip Waldron,Dan-Xia Xu,K.P. Yap,Winnie N. Ye +12 more
TL;DR: In this paper, the authors present an overview of recent work on several fundamental optical elements and their integration on the silicon-on-insulator (SOI) waveguide platform.
Journal ArticleDOI
Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly
TL;DR: In this article, a heterogeneously-integrated InGaAsP-on-Si microdisk laser is demonstrated using an optofluidic assembly technique on a silicon platform.
Journal ArticleDOI
Demonstration of low power penalty of silicon Mach-Zehnder modulator in long-haul transmission.
TL;DR: This work demonstrates error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB and indicates a practical application for the silicon modulator in the middle- or long-distance transmission systems.
Journal ArticleDOI
Slow-Light-Enhanced Silicon Optical Modulators Under Low-Drive-Voltage Operation
Antoine Brimont,A. M. Gutierrez,M. Aamer,D. J. Thomson,Frederic Y. Gardes,J-M. Fedeli,Graham T. Reed,Javier Martí,Pablo Sanchis +8 more
TL;DR: In this paper, the authors exploit the use of slow light to reduce the driving voltage of carrier-depletion-based Mach-Zehnder modulators and achieve a modulation efficiency as high as VπLπ ~ 0.6 V·cm with a 1.5 Vpp drive voltage and an insertion loss of ~12 dB.
Journal ArticleDOI
Compact Silicon Electro-Optical Modulator Using Hybrid ITO Tri-Coupled Waveguides
TL;DR: In this paper, a tri-coupled waveguide-based silicon electro-optical modulator is proposed, which is designed such that it will both change the coupling conditions and introduces additional intrinsic losses at the telecommunication wavelength (1550 nm).
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).