Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies
Journal ArticleDOI
Simplified numerical method for analyzing TE-like modes in a three-dimensional circularly bent dielectric rib waveguide by solving two one-dimensional eigenvalue equations
Chih T’sung Shih,Shiuh Chao +1 more
TL;DR: In this paper, the authors presented a method to solve the TE-like modes for a 3D circularly bent dielectric rib waveguide by reducing the radial part of the Helmholtz equation to contain only the radial component of the electric field.
Journal ArticleDOI
Silicon on insulator photo-activated modulator
TL;DR: A novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical, faster operation rates are anticipated.
Journal ArticleDOI
Hydrogenated amorphous silicon multi-SOI waveguide modulator with low voltage-length product
TL;DR: In this article, a waveguide-integrated Fabry-Perot resonating cavity based on an index and conductivity-high-contrast amorphous silicon/amorphous silicon carbide (a-Si:H/a -SiC:H) multistack was characterized for the first time.
Journal ArticleDOI
Ge islands and photonic crystals for Si-based photonics
Philippe Boucaud,X. Li,M. El Kurdi,S. David,X. Checoury,Sébastien Sauvage,C. Kammerer,S. Cabaret,V. Le Thanh,Daniel Bouchier,Jean-Michel Lourtioz,Olivier Kermarrec,Yves Campidelli,Daniel Bensahel +13 more
TL;DR: In this article, the integration of Ge/Si self-assembled islands into two-dimensional photonic crystals for silicon-based photonics is described, and the evolution of microcavity photoluminescence with pump power depends on the air filling factor of the photonic crystal.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).