Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition
TL;DR: In this paper, a vertical p-i-n Si0.9 diode with Ge/Si0.15Ge0.85 quantum wells in the intrinsic region is selectively grown in holes in a SiO2 mask.
Journal ArticleDOI
Error-free transmission of microring-modulated BPSK.
Kishore Padmaraju,Noam Ophir,Qianfan Xu,Bradley S. Schmidt,Jagat Shakya,Sasikanth Manipatruni,Michal Lipson,Keren Bergman +7 more
TL;DR: Bit-error-rate measurements and eye diagrams show near equivalent performance of a microring-based BPSK modulator as compared to commercial LiNbO₃ phase modulators.
Journal ArticleDOI
High frequency electro-optic measurement of strained silicon racetrack resonators
Massimo Borghi,Mattia Mancinelli,Florian Merget,Jeremy Witzens,Martino Bernard,Mher Ghulinyan,Georg Pucker,Lorenzo Pavesi +7 more
TL;DR: High-frequency measurements on strained silicon racetrack resonators demonstrate that plasma carrier dispersion is responsible for the observed electro-optic effect and show that any optical modulation vanishes, independent of the applied strain, when the applied voltage varies much faster than the carrier effective lifetime.
Journal ArticleDOI
Mode-size converter with high coupling efficiency and broad bandwidth.
TL;DR: An ultralow coupling loss and broad bandwidth fiber-to-waveguide mode-size converter is demonstrated for nano-scale waveguides on SOI platform using CMOS technology in this paper.
Journal ArticleDOI
Analysis of Optical and Electrical Tradeoffs of Traveling-Wave Depletion-Type Si Mach–Zehnder Modulators for High-Speed Operation
Despoina Petousi,Lars Zimmermann,Andrzej Gajda,Marcel Kroh,Karsten Voigt,Georg Winzer,Bernd Tillack,Klaus Petermann +7 more
TL;DR: In this article, the fundamental optical and electrical tradeoffs which are limiting high-speed operation of broadband depletion-type silicon Mach-Zehnder modulators (MZMs) are studied.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).