Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
More filters
Journal ArticleDOI
NDR-effect Vertical-illumination-type Ge-on-Si Avalanche Photodetector
TL;DR: The experimental results indicate that considerable improvement in a module performance can be expected by utilizing the Ge-on-Si APD operated in the NDR region with a properly customized TIA.
Journal ArticleDOI
Electro-optic directed XOR logic circuits based on parallel-cascaded micro-ring resonators.
Yonghui Tian,Zhao Yongpeng,Chen Wenjie,Anqi Guo,Li Dezhao,Zhao Guolin,Zilong Liu,Huifu Xiao,Guipeng Liu,Jianhong Yang +9 more
TL;DR: An electro-optic photonic integrated circuit which can perform the exclusive (XOR) logic operation based on two silicon parallel-cascaded microring resonators fabricated on the silicon-on-insulator (SOI) platform is reported.
Journal ArticleDOI
Nanoscale Silicon-on-Insulator Photo-Activated Modulator Building Block for Optical Communication
TL;DR: This novel optoelectronic device can serve as a building block toward the development of optical data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.
Journal ArticleDOI
Directly written photo-crosslinked fluorinated polycarbonate photoresist materials for second-order nonlinear optical (NLO) applications
Shuxiang Ding,Chunxue Wang,Xiaoyu Shi,Jiawei Zou,Qiuli Cheng,Jiufu Zhu,Zuosen Shi,Zhenzhen Cai,Changming Chen,Zhanchen Cui +9 more
TL;DR: In this paper, a series of acrylate group terminated fluorinated polycarbonates containing 4,4-cyclohexylidenebis phenol (BPZ) or dodecyl chains (AF-Ali-PC MAs) were synthesized.
Journal ArticleDOI
Si racetrack optical modulator based on the III-V/Si hybrid MOS capacitor.
Qiang Li,Chong Pei Ho,Hanzhi Tang,Makoto Okano,Kazuhiro Ikeda,Shinichi Takagi,Mitsuru Takenaka +6 more
TL;DR: In this article, a Si racetrack optical modulator based on a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitance was fabricated for 10-dB optical intensity modulation, which showed a 60% smaller driving voltage than a Mach-Zehnder interferometer modulator with the same phase shifter.
References
More filters
Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).