Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Linear electro-optic effect in ferroelectric HfO2-based epitaxial thin films
Shinya Kondo,Reijiro Shimura,Takashi Teranishi,Akira Kishimoto,Takanori Nagasaki,Hiroshi Funakubo,Tomoaki Yamada,Tomoaki Yamada +7 more
Journal ArticleDOI
Photoluminescence study of thulium-doped silicon substrates for light emitting diodes
TL;DR: In this article, the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm 3+ was discussed.
Posted Content
Broadband Terahertz Modulators based on MEMS-Reconfigurable Mesh Filters
TL;DR: In this paper, a new class of meta-surfaces with electrically-induced diamagnetic switching capability at room temperature was demonstrated, which enabled terahertz intensity modulation with record high modulation depths and modulation bandwidths through a fully integrated device platform.
Journal ArticleDOI
ALD high-k layer grating couplers for single and double slot on-chip SOI photonics
TL;DR: In this paper, state of the art grating couplers for horizontal single and double slot waveguides are presented; in these devices the input signal is transmitted from a single mode optical fiber to silicon on insulator slot waveguide.
Journal ArticleDOI
Tunneling-induced π-phase shift of a quantum-dot molecule coupled to a single-sided cavity
TL;DR: In this article, the authors studied optical dispersive properties of a combined system composed of a single-sided cavity with low quality factor Q and a quantum-dot molecule (QDM) embedded in cavity.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).