Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
High efficiency wavelength conversion of 10 Gb/s data in silicon waveguides
TL;DR: Efficient wavelength conversion via four-wave-mixing in silicon-on-isolator p-i-n waveguides has been realized and conversion efficiency as functions of pump power, wavelength detuning, and bias voltages, have been investigated.
Journal ArticleDOI
Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors.
TL;DR: An optical link on silicon using micrometer-scale ring-resonator enhanced silicon modulators and waveguide-integrated germanium photodetectors is reported, an essential step towards large-scale on-chip optical interconnects for future microprocessors.
Journal ArticleDOI
Ultra-low capacitance and high speed germanium photodetectors on silicon
Long Chen,Michal Lipson +1 more
TL;DR: It is shown that waveguide integrated germanium detectors with capacitance as small as 2.4 fF and directly recorded impulse response as fast as 8.8 ps can be used for wavelength division demultiplexing.
Journal ArticleDOI
Electrically driven silicon resonant light emitting device based on slot-waveguide
TL;DR: An all-silicon in-plane micron-size electrically driven resonant cavity light emitting device (RCLED) based on slotted waveguide that is capable of operating at a very low bias current of 0.75 nA is proposed and modeled.
Posted Content
Why I am optimistic about the silicon-photonic route to quantum computing
TL;DR: In this paper, the authors present a short overview of how building a large-scale, silicon-photonic quantum computer has been reduced to the creation of good sources of 3-photon entangled states.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).