Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Patent
Electro-optical modulator structure
Damian Goldring,David Mendlovic +1 more
TL;DR: In this paper, an ultra-compact optical modulator comprising at least one resonator on a semiconductor chip is presented, where the free carrier concentration in the waveguide layer is controlled, enabling a modulation of the resonator's refractive index.
Journal ArticleDOI
Subterranean silicon photonics: Demonstration of buried waveguide-coupled microresonators
TL;DR: Laterally coupled silicon microresonators are fabricated beneath the surface of a silicon-on-insulator substrate using a modified separation by implantation of an oxygen technique as mentioned in this paper.
Patent
Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
TL;DR: In this paper, a silicon-based thin-film structure that can be used to form high frequency optical modulators is presented. But the design of the modulator is not described.
Proceedings ArticleDOI
High speed travelling wave carrier depletion silicon Mach-Zehnder modulator
TL;DR: In this paper, the authors present the first demonstration of a traveling wave carrier depletion Mach-Zehnder modulator impedance matched to 50 Ω, which has a bandwidth of 24 GHz and a halfwave voltage length product of 0.7 V-cm.
Journal ArticleDOI
Porous Silicon One-Dimensional Photonic Crystals for Optical Signal Modulation
TL;DR: In this article, the performance characteristics of the porous silicon photonic crystal microcavities can be tailored to specific applications based on the choice of infiltrated optically active material and the quality factor of the device.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).