Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Proceedings ArticleDOI
8×8 Wavelength Reconfigurable Photonic Switch Using Thermally Tuned Micro-Ring Resonators Fabricated on Silicon Substrate
TL;DR: In this paper, an 8×8 wavelength reconfigurable photonic switch using micro-ring resonators fabricated on silicon substrate is described, and the switch channels are routed by independent thermo-optic tuning of resonators with local heaters.
Journal ArticleDOI
Characterization of field-effect mobility at optical frequency by microring resonators
TL;DR: In this article, a novel characterization method is proposed to extract the optical frequency field effect mobility (μop,FE) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide (ITiO)/SiO2/silicon metaloxide-semiconductor (MOS) capacitor.
Proceedings ArticleDOI
Slow-light photonic crystal switches and modulators
TL;DR: In this paper, the authors discuss the performance of slow-light enhanced optical switches and modulators fabricated in silicon and demonstrate the 3 ps switching time of a femtosecond pump pulse.
Proceedings ArticleDOI
Tunable electro-optic modulator on silicon-on-insulator substrates using ring resonators
TL;DR: In this article, a tunable electro-optic modulator using ring resonators on silicon-on-insulator substrate was proposed, achieving a steady state on-off ratio of 90% at 775MHz.
Silicon photonic devices for optoelectronic integrated circuits
TL;DR: In this article, an InGaAsP microdisk laser integrated with silicon waveguides has been demonstrated with a threshold pump of 0.6 mW and a maximum output power of 90 μW at room temperature under pulsed condition.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).