Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Proceedings ArticleDOI
Wide bandwidth, low loss 1 by 4 wavelength division multiplexer on silicon for optical interconnects
Dawn T. H. Tan,Kazuhiro Ikeda,Steve Zamek,Amit Mizrahi,Maziar P. Nezhad,Ashok V. Krishnamoorthy,Kannan Raj,John E. Cunningham,Xuezhe Zheng,Ivan Shubin,Ying Luo,Yeshaiahu Fainman +11 more
TL;DR: In this article, an add/drop filter based on coupled vertical gratings on silicon is demonstrated for a 1 by 4 wavelength division multiplexer with 3nm bandwidth, 1dB insertion loss and 16dB crosstalk suppression.
Journal ArticleDOI
Electrooptic modulation of multisilicon-on-insulator photonic wires
TL;DR: In this article, the authors proposed and analyzed electrically modulated submicrometer-size high-index-contrast waveguides (photonic wires) based on a multisilicon-on-insulator (MSOI) platform.
Journal ArticleDOI
Normal incidence p–i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition
TL;DR: In this paper, normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate are reported.
Journal ArticleDOI
High-speed and high-efficiency Si optical modulator with MOS junction, using solid-phase crystallization of polycrystalline silicon
TL;DR: In this paper, a high-speed and high-efficiency MOS-capacitor-type Si optical modulator (Si-MOD) was developed by applying a low optical loss and a low resistivity of a poly-Si gate with large grains.
Journal ArticleDOI
Silicon photonic read-only memory
TL;DR: In this paper, a CMOS-compatible in-plane micrometer-size optically readable nonvolatile memory device is proposed and analyzed, which consists of an electrically erasable programmable read-only memory (EEPROM) integrated on a high-index-contrast silicon-on-insulator (SOI) rib waveguide.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).