Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Ultra-compact and broadband electro-absorption modulator using an epsilon-near-zero conductive oxide
Qian Gao,Erwen Li,Alan X. Wang +2 more
TL;DR: In this article, an ultra-compact broadband electro-absorption (EA) modulator using an epsilon-near-zero (ENZ) indium-tin oxide (ITO) was reported.
Proceedings ArticleDOI
A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides
Shen Ren,Yiwen Rong,Stephanie A. Claussen,Rebecca K. Schaevitz,Theodore I. Kamins,James S. Harris,David A. B. Miller +6 more
TL;DR: In this paper, a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides is presented, which shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.
Journal ArticleDOI
Adiabatic microring modulators.
TL;DR: The smallest (4-μm-diameter) microring modulators shown to date are demonstrated, yielding 6.92-THz uncorrupted free spectral ranges and operation up to 12.5-Gb/s data rates are demonstrated.
Journal ArticleDOI
High acetic acid sensing performance of Mg-doped ZnO/rGO nanocomposites
TL;DR: In this paper, Mg-doped ZnO/reduced graphene oxide (rGO) nanocomposites were synthesized using a facile and cost-effective sol-gel procedure to detect acetic acid vapor.
Journal ArticleDOI
A Selective-Area Metal Bonding InGaAsP–Si Laser
Tao Hong,Guangzhao Ran,Ting Chen,Jiaoqing Pan,Weixi Chen,Yang Wang,Yuanbing Cheng,Song Liang,Lingjuan Zhao,Lu-Qiao Yin,Jian-Hua Zhang,Wei Wang,Guogang Qin +12 more
TL;DR: In this paper, a 1.55-μm hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method and two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).