Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Engineered nanophotonic waveguide with ultra-low dispersion.
TL;DR: In this paper, a silicon-based engineered hybrid plasmonic waveguide with ultra-low dispersion is proposed, which enables nano-scale confinement with electrically tunable characteristics using the plasma dispersion effect in silicon.
Journal ArticleDOI
Optical 8PSK Generation by Cascading Squared and Rectangular QPSK Using Microring Modulators
TL;DR: In this article, the authors proposed and successfully simulated a general design concept of an 8PSK generator using a silicon microring modulator, which was used to generate phase shift keying (QPSK).
Journal ArticleDOI
Novel cubic-phase pyrochlore Sb(III)2Sn(IV)2O7 transformed from Sn(II)2Sb(V)2O7: First-principles calculation-based prediction and experimental evidence
TL;DR: In this paper, a cubic-phase pyrochlore antimony stannate Sb(III)2Sn(IV)2O7 was predicted by first-principles calculations.
Journal ArticleDOI
Simulation Study of a Monolithic III-V/Si V-Groove Carrier Depletion Optical Phase Shifter
TL;DR: In this article, a carrier depletion-type hybrid III-V/Si optical phase shifter using a n-III-V p-Si hetero-junction was proposed, which can be fabricated with direct epitaxial growth of IIIV semiconductors on Si.
Journal ArticleDOI
Monolithic Integration of CMOS Temperature Control Circuit and Si 3 N 4 Microring Filters for Wavelength Stabilization Within Ultra Wide Operating Temperature Range
Huan Zhang,Beiju Huang,Zan Zhang,Chuantong Cheng,Zanyun Zhang,Hengjie Zhang,Chengyu Min,Run Chen,Hongda Chen +8 more
TL;DR: In this paper, a monolithic integration of complementary metal-oxide-semiconductor (CMOS) temperature control circuit and Si3N4 microring filters for resonant wavelength stabilization is presented.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).