Journal ArticleDOI
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TLDR
An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.Abstract:
Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.read more
Citations
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Journal ArticleDOI
Optical Metasurfaces: Evolving from Passive to Adaptive
Journal ArticleDOI
Recent Progress in High-Speed Silicon-Based Optical Modulators
Delphine Marris-Morini,Laurent Vivien,G. Rasigade,J-M. Fedeli,Eric Cassan,X. Le Roux,P. Crozat,Sylvain Maine,A. Lupu,P. Lyan,P. Rivallin,M. Halbwax,S. Laval +12 more
TL;DR: Recent results on high-speed and low-loss silicon optical modulator using an asymmetric Mach-Zehnder interferometer are presented, based on a p-doped slit embedded in the intrinsic region of a lateral pin diode integrated in a silicon-on-insulator waveguide.
Journal ArticleDOI
Direct measurement of tunable optical delays on chip analogue to electromagnetically induced transparency
TL;DR: Direct time-domain measurement of tunable optical delay in a silicon resonating structure composed by a double-ring resonator, whose spectrum has a narrow transparency peak with low group velocity analogous to that in electromagnetically induced transparency is presented.
Journal ArticleDOI
Silicon Nanocrystals as an Enabling Material for Silicon Photonics
Zhizhong Yuan,Aleksei Anopchenko,Nicola Daldosso,Romain Guider,Daniel Navarro-Urrios,Alessandro Pitanti,R. Spano,Lorenzo Pavesi +7 more
TL;DR: Property and applications of Si-nc in silicon photonics are reviewed and its sensitization effect on Er ions to achieve infrared light amplification and nonlinear optical effects, which enable fast all-optical switches, are described.
Journal ArticleDOI
Nonlinear-optical phase modification in dispersion-engineered Si photonic wires
Jerry I. Dadap,Nicolae C. Panoiu,Xiaogang Chen,I-Wei Hsieh,Xiaoping Liu,Cheng-Yun Chou,E. Dulkeith,Sharee J. McNab,Fengnian Xia,William M. J. Green,Lidija Sekaric,Yurii A. Vlasov,Richard M. Osgood +12 more
TL;DR: This paper provides a review of the control of phase using nonlinear-optical effects such as self-phase and cross-phase modulation in dispersion-engineered Si wires.
References
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Journal ArticleDOI
Electrooptical effects in silicon
TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Journal ArticleDOI
A review of lithium niobate modulators for fiber-optic communications systems
Ed Wooten,K.M. Kissa,A. Yi-Yan,E.J. Murphy,D.A. Lafaw,P.F. Hallemeier,D. Maack,D.V. Attanasio,D.J. Fritz,G.J. McBrien,D.E. Bossi +10 more
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Journal ArticleDOI
Silicon-based optoelectronics
TL;DR: In this article, a review of Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic, is presented, with a focus on column IV materials (Si, Ge, C and Sn).