Journal ArticleDOI
A review of junction field effect transistors for high-temperature and high-power electronics
TLDR
In this paper, the status of GaAs, SiC and GaN junction field effect transistors (JFETs) is reviewed with a focus on their application to high temperature and high power operation.Abstract:
The status of GaAs, SiC and GaN junction field effect transistors (JFETs) is reviewed with a focus on their application to high temperature and high power operation. The advantage of the JFET structure for this operation regime is detailed. Future directions for junction gated transistors are outlined.read more
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Journal ArticleDOI
Alternative Plasmonic Materials: Beyond Gold and Silver
TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices
TL;DR: In this paper, the authors present a review of high-temperature power devices with a focus on the die attach materials operating at temperatures higher than 623 K (350 K).
Journal ArticleDOI
Silicon carbide and diamond for high temperature device applications
TL;DR: The physical and chemical properties of wide bandgap semiconductors silicon carbide and diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates as mentioned in this paper.
Journal ArticleDOI
A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode.
TL;DR: The graphene film/semiconductor moving Schottky diode-based generator behaves better flexibility and stability, which does not show obvious degradation after 10 000 times of running, indicating its great potential in the usage of portable energy source.
References
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Journal ArticleDOI
Wide bandgap semiconductor materials and devices
TL;DR: In this paper, an overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented.
Journal ArticleDOI
Thermal stability of W ohmic contacts to n‐type GaN
Melanie W. Cole,D. W. Eckart,W. Y. Han,R. L. Pfeffer,T. Monahan,Fan Ren,C. Yuan,Richard A. Stall,Stephen J. Pearton,Y. Li,Yicheng Lu +10 more
TL;DR: In this article, W was found to produce low specific contact resistance (ρc∼8.0×10−5 Ω cm2) ohmic contacts to n+−GaN (n=1.5×1019 cm−3) with limited reaction between the metal and semiconductor up to 1000°C.
Journal ArticleDOI
Ion‐implanted GaN junction field effect transistor
John C. Zolper,Randy J. Shul,Albert G. Baca,Robert G. Wilson,Stephen J. Pearton,Richard A. Stall +5 more
TL;DR: In this paper, selective area ion implantation doping has been used to fabricate GaN junction field effect transistors (JFETs), achieving a gate turn-on voltage of 1.84 V at 1 mA/mm of gate current.
Journal ArticleDOI
Femtojoule high speed planar GaAs E-JFET logic
Abstract: An integrated inverter stage operating in the gigabit range at a static power dissipation of 100 µW was built for future use in LSI logic circuits. Planar gallium arsenide technology was employed using selective ion-implanted enhancement mode junction field-effect transistors (E-JFET) having 3-µm gate lengths. A nine-stage ring oscillator served as a test vehicle to assess the speed-power product for digital applications. A theoretical analysis shows the transistor operates during the switching transient in the saturation regime, notwithstanding steady-state operation in the linear regime. When the transistor is switched off, the transient response is governed by the load resistance and the input capacitance of the subsequent stage. Means of reducing the switching time by increasing the supply voltage, nonlinear load devices, an output buffer stage, and reduction of gate length and width are described. Directly coupled E-JFET logic does not require level shifting, and, therefore, offers advantages over depletion-mode gallium arsenide MESFET logic by reducing the number of circuit elements per gate. Projected gallium arsenide E-JFET LSI logic circuits will surpass silicon-based bipolar logic with respect to both speed and power, and n-channel silicon MOS logic with respect to speed.
Journal ArticleDOI
Wide Bandgap Semiconductor Power Devices
TL;DR: The present status of high-voltage power semiconductor switching devices is reviewed in this article, where the choice and design of device structures are presented and the simulated performance of the key devices in 4H-SiC is described.
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