CMOS image sensors: electronic camera-on-a-chip
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.Abstract:
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.read more
Citations
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Journal ArticleDOI
A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening
Taiyun Chi,Jong Seok Park,Jessica C. Butts,Tracy A. Hookway,Amy Su,Chengjie Zhu,Mark P. Styczynski,Todd C. McDevitt,Hua Wang +8 more
TL;DR: A fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring is presented.
Proceedings ArticleDOI
CMOS active pixel image sensor with CCD performance
TL;DR: In this article, a color CMOS image sensor has been developed which meets the performance of mainstream CCDs, which yields a high light sensitivity, expressed by the conversion gain of 9 (mu) V/electron and the quantum efficiency fill factor product of 28 percent.
Journal ArticleDOI
An integrated optical transient sensor
TL;DR: In this article, the implementation of a compact continuous-time optical transient sensor with commercial CMOS technology is presented, which consists of a photodiode, five transistors and a capacitor.
Patent
Active pixel sensor with a diagonal active area
TL;DR: An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line was proposed in this article, which eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager.
Journal ArticleDOI
High resolution digital holography
TL;DR: In this article, the authors used interference holography for the measurement of the deformation of a sub-millimetre silicon cantilever and phase contrast imaging of the same object.
References
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Journal ArticleDOI
Charge coupled semiconductor devices
W. S. Boyle,G. E. Smith +1 more
TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
CMOS active pixel image sensors for highly integrated imaging systems
Sunetra K. Mendis,Sabrina E. Kemeny,R.C. Gee,Bedabrata Pain,Craig Staller,Quiesup Kim,Eric R. Fossum +6 more
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI
Active Pixel Sensors: Are CCD's Dinosaurs?
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI
CMOS active pixel image sensor
TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.