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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Journal ArticleDOI

A high frame rate, 16 million pixels, radiation hard CMOS sensor

TL;DR: A novel CMOS sensor designed for transmission electron microscopy, consisting of a large 61 × 63 mm2 silicon area containing 16 million pixels arranged in a 4K × 4K array, with radiation hard geometry, with very fast readout and dynamic range close to 12 bits.
Patent

Methods and systems for coded rolling shutter

TL;DR: In this paper, a coded rolling shutter is proposed to capture sub-images that effectively encode motion and dynamic range information within a single captured image, and the readout timing and exposure length for each row of a pixel array in an image sensor are controlled.
Journal ArticleDOI

Moving liquids with light: Photoelectrowetting on semiconductors

TL;DR: By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator- semiconductor stack, which could lead to new silicon-based technologies in areas such as Laboratory-on aChip, Microfluidics and Optofluidics.
Patent

Time domain sensing technique and system architecture for image sensor

TL;DR: In this paper, a photodiode sensor with an associated capacitance was used to measure the time for the capacitance to discharge to a predetermined threshold value, which may be a function of time.
Journal ArticleDOI

Chip-Scale Integration of Data-Gathering Microsystems

TL;DR: This paper illustrates a 0.15-cm/sup 3/ multisensor microsystem for autonomously sensing and storing environmental and biological data with a micromachined silicon platform that implements through-wafer interconnects, solder-based microconnectors, and recessed cavities for chip-stacking.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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