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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Microchip post-processing: There is plenty of room at the top

TL;DR: More-than-Moore as mentioned in this paper discusses the physical location where new functions can be added to a microchip and which considerations may lead to the above-IC approach, and the boundary conditions for post-processing are sketched.
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Technological Evolution of Image Sensing Designed by Nanostructured Materials

TL;DR: In this paper , a review of recent advances in image sensing using nanostructured emerging materials through nanofabrication integration including the technology evolution on traditional and modern technology platforms, general mechanisms, classification, and actual applications as well as existing limitations are discussed.
Book ChapterDOI

Monitoring chronic wounds and determining treatment

TL;DR: In this article, the authors review existing wound measurement techniques and highlight the underlying principles and difficulties of wound color measurements by digital cameras and an example classification system for wound color classification is presented.
Journal ArticleDOI

Characterization of a thinned back illuminated MIMOSA V sensor as a visible light camera

TL;DR: In this paper, the measurements that have been performed both in the Silicon Detector Laboratory at the University of Insubria (Como, Italy) and at the Instituto Ricerche SOlari Locarno (IRSOL) to characterize a CMOS pixel particle detector as a visible light camera are presented.
Journal ArticleDOI

A MAPS-based readout for a Tera-Pixel electromagnetic calorimeter at the ILC

TL;DR: TPAC 1.0 has been manufactured in the 180 nm CMOS INMAPS process which includes a deep p-well implant as mentioned in this paper. But the performance of the TPAC1.0 chip has not been evaluated.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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