scispace - formally typeset
Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

read more

Citations
More filters
Proceedings ArticleDOI

High dynamic range, arbitrated address event representation digital imager

TL;DR: An 80/spl times/60 pixels arbitrated address-event imager has been designed and fabricated in a 0.6 /spl mu/m CMOS process and has a large dynamic range: 200 dB for an individual pixel.
Journal ArticleDOI

Toward Always-On Mobile Object Detection: Energy Versus Performance Tradeoffs for Embedded HOG Feature Extraction

TL;DR: A custom version of histograms of oriented gradient features based on 2-b pixel ratios is presented and shown to achieve superior object detection performance for the same estimated energy compared with conventional HOG features.
Patent

CMOS imager cell having a buried contact and method of fabrication

TL;DR: In this article, the authors proposed to use a buried contact between the floating diffusion region and the gate of a source follower output transistor to decrease leakage from the diffusion region into the substrate, which may occur with other techniques for interconnecting the diffusion regions with the source follower transistor gate.
Journal ArticleDOI

Multimodal Integrated Sensor Platform for Rapid Biomarker Detection

TL;DR: A versatile single complementary metal–oxide–semiconductor chip forming a platform to address personalized needs through on-chip multimodal optical and electrochemical detection that will reduce the number of tests that patients must take is presented.
Journal ArticleDOI

A CMOS image sensor with a double-junction active pixel

TL;DR: In this paper, a double-junction photodiode structure was proposed for color imaging with only two filters, using a 184*154 (near-QCIF) 6-transistor pixel array at a 9.6/spl mu/m pitch implemented in 0.35-/spl µ/m technology.
References
More filters
Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
Related Papers (5)