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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Journal ArticleDOI

Asymmetric Light Excitation for Photodetectors Based on Nanoscale Semiconductors.

TL;DR: The asymmetric-light-excitation photoelectric detectors with symmetric electrical contacts working at zero external bias shows wider availability to other nanomaterials for modern optoelectronics.
Dissertation

Imagerie de photoluminescence synchrotron pour l’étude de matériaux anciens semi-conducteurs

TL;DR: In this paper, le dispositif de microscopie de photoluminescence existant de la ligne DISCO du synchrotron SOLEIL is presented.
Book ChapterDOI

Image and signal sensors for computing and machine vision: Developments to meet future needs

TL;DR: Although they are yet to break fully into the market, image sensors developed from alternative solution-processed materials such as organic semiconductors and organohalide perovskites have immense potential to address the above issues and to ‘disrupt’ machine vision technology.
Journal ArticleDOI

Extended One-Dimensional Analysis to Effectively Derive Quantum Efficiency of Various CMOS Photodiodes

TL;DR: In this paper, an extended 1-D analysis to derive quantum efficiency of various commonly used CMOS photodiodes is proposed, where the minority carrier and current densities are continuous across the interface between two layers with the same dopant type.
Proceedings ArticleDOI

Single-chip camera modules for mosaic image sensor

TL;DR: A method is described in which the number and sizes of pixel clusters above an intensity threshold are determined using a novel 'object positioning algorithm' architecture, which identifies significant events or objects in the scene before the camera's data are transmitted over the bus, thereby reducing the effective bandwidth.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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