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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Proceedings ArticleDOI

Design of a configurable bit-resolution CMOS image sensor for the image depth extraction

TL;DR: The proposed CIS has a maximum resolution of 12-bit for IR pixels with the architecture of two-step single-slope(TS SS) type, and it has been designed with 0.18μm CIS technology.
Patent

Optical apparatus including optical element for deflecting luminous flux

TL;DR: In this paper, an optical apparatus is disclosed for the focus detection by the TTL phase difference detection method, and capable of producing a pair of phase difference images for focus detection with high accuracy.
Book ChapterDOI

Active Pixel Sensor CMOS Operating Multi - Sampled in Time Domain

TL;DR: Several researchers proposed different CMOS image sensors architectures with high dynamic range and the sampling in time-domain concept proposed suggest that the comparison between CCD and CMOS circuits that compound cameras should be compared.
Journal ArticleDOI

Analog Motion Detection Circuits Using Simple Edge Detection Circuits Based on the Vertebrate Retina

TL;DR: Novel analog motion detection circuits using previous proposed edge detection circuits based on the vertebrate retina are proposed, which is characterized by the wide dynamic range, low power consumption and compact structure.
Proceedings ArticleDOI

Dynamic range extension of an active pixel sensor by combining output signals from photodiodes with different sensitivities

TL;DR: A dynamic range (DR) extension technique based on a 3-transistor (3-Tr.) active pixel sensor (APS) and dual image sampling has been proposed and has several advantages; no-external equipments or signal processing for combining images, no-additional timerequirement for additional charge accumulation, adjustable DR extension and no temporal disparity.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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