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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Patent

Single substrate camera device with CMOS image sensor

TL;DR: In this paper, a single substrate device is formed to have an image acquisition device and a controller, and the controller on the substrate controls the system operation, which is called the image acquisition controller.
Journal ArticleDOI

A rad-hard CMOS active pixel sensor for electron microscopy

TL;DR: In this article, a CMOS pixel test structure able to withstand doses in excess of 1.5 GHz was presented, and the point spread function measured with 300 keV electrons was (8.1 ± 1.6 ) μ m for 10 μ m pixel and (10.9 ± 2.3 ) μm for 20 μ m pixels, respectively, which agrees well with the values of 8.4 and 10.5 μ m predicted by simulation.
Journal ArticleDOI

Monolithic pixel detectors in a 0.13 μm CMOS technology with sensor level continuous time charge amplification and shaping

TL;DR: In this article, the feasibility of a new implementation of CMOS monolithic active pixel sensors (MAPS) for applications to charged particle tracking is studied. But the authors focus on the front-end of the front end of the system, which relies upon a charge sensitive amplifier (CSA), embedded in the elementary pixel cell.
Journal ArticleDOI

Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

TL;DR: In this article, the origin of total ionizing dose induced dark current in CMOS image sensors was investigated by comparing dark current measurements to interface state density and trapped charge density measurements, and it was shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current.
Proceedings ArticleDOI

Variable resolution CMOS current mode active pixel sensor

TL;DR: A current mediated active pixel sensor with variable image size and resolution with high speed operation and low power supply capacity is presented for power saving, electronic zooming, and data reduction at the sensor level.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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