CMOS image sensors: electronic camera-on-a-chip
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.Abstract:
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.read more
Citations
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Journal ArticleDOI
Lateral drift-field photodiode for low noise, high-speed, large photoactive-area CMOS imaging applications
Daniel Durini,Andreas Spickermann,Rana Mahdi,Werner Brockherde,Holger Vogt,Anton Grabmaier,Bedrich Hosticka +6 more
TL;DR: In this article, a lateral drift-field photodetector pixel is fabricated in a 0.35μm CMOS process and the pixel readout is performed using an in-pixel source-follower pixel buffer configuration followed by an output amplifier featuring correlated double sampling.
Journal ArticleDOI
Identification of radiation induced dark current sources in Pinned PhotoDiode CMOS Image Sensors
Vincent Goiffon,Cedric Virmontois,Pierre Magnan,Paola Cervantes,S. Place,Marc Gaillardin,Sylvain Girard,P. Paillet,Magali Estribeau,Philippe Martin-Gonthier +9 more
TL;DR: In this paper, the authors investigated the effect of pixel layout variations on the total ionizing dose induced dark current in Pinned PhotoDiodes (PPD) CMOS image sensors.
Patent
Apparatus having hybrid monochrome and color image sensor array
TL;DR: In this paper, an image sensor array can include monochrome pixels and color sensitive pixels, without wavelength selective color filter elements, and with or without a color filter element, respectively.
Patent
Method and apparatus for collecting and displaying network device information
TL;DR: In this paper, the disclosure is directed to a network management system, which includes at least one device definition file, a simple network management protocol enabled communications interface, and a data access interface.
Journal ArticleDOI
A novel monolithic active pixel detector in triple well CMOS technology with pixel level analog processing
G. Rizzo,S. Bettarini,G. Calderini,R. Cenci,F. Forti,Mario Giorgi,Fabio Morsani,Lodovico Ratti,V. Speziali,Massimo Manghisoni,Valerio Re,Gianluca Traversi,L. Bosisio +12 more
TL;DR: In this article, a monolithic active pixel sensor (MAPS) was designed and fabricated in STMicrolectronics 0.13 µm CMOS technology, exploiting the triple well option to implement, at the pixel level, a more complex signal processor and to increase the size of the charge collecting electrode with respect to previously developed CMOS MAPS.
References
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Journal ArticleDOI
Charge coupled semiconductor devices
W. S. Boyle,G. E. Smith +1 more
TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article
CMOS image sensors: Electronic camera-on-a-chip
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI
CMOS active pixel image sensors for highly integrated imaging systems
Sunetra K. Mendis,Sabrina E. Kemeny,R.C. Gee,Bedabrata Pain,Craig Staller,Quiesup Kim,Eric R. Fossum +6 more
TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI
Active Pixel Sensors: Are CCD's Dinosaurs?
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI
CMOS active pixel image sensor
TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.