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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Patent

Method for generating an image in electronic form, image element for an image sensor for generating an image, and image sensor

TL;DR: In this paper, a method for continuously generating a (greyscale) map of a scene in electronic form, characterized by high time resolution and minimal data volume, is presented, which involves repeated measurement of the instantaneous exposure of the image elements in an image sensor, the start of every exposure measurement being determined autonomously and asynchronously by every image element independently, and hence redundancy which is typical of synchronous image sensors in the image data to be transmitted being largely suppressed.
Journal ArticleDOI

Novel Operation Scheme for Realizing Combined Linear-Logarithmic Response in Photodiode-Type Active Pixel Sensor Cells

TL;DR: In this article, a novel operation scheme that realizes a combined linear-logarithmic response in conventional photodiode-type (PD) three-transistor (3-Tr) active pixel sensor (APS) cells is presented.
Proceedings ArticleDOI

Low-power implementation of H.324 audiovisual codec dedicated to mobile computing

TL;DR: A VLSI implementation of the H.324 audiovisual codec is described, using 0.35 /spl mu/m CMOS 4LM technology, which contains totally 420 K transistors with the dissipation of 224.32 mW from single 3.3 V supply.
Journal ArticleDOI

Proposal of Micro-Trichroic Structures for High-Sensitivity Color Image Sensors

TL;DR: In this article, a micro-trichroic structure based on multiplexed Bragg reflectors was proposed to enhance the ability of color ISs, which can reduce the number of diffraction angles.
Journal ArticleDOI

Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging

TL;DR: In this article , a facile blade-coating process is developed for large area deposition of uniform thick organic active layers in organic photodiodes (OPDs), and large-area semi-transparent top metal electrodes are thermally evaporated with an optimal deposition rate to achieve good balance between transparency and conductivity for top illumination integration structure with the organic thin-film transistor (OTFT) backplane.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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