Journal ArticleDOI
Controlled formation of sharp zigzag and armchair edges in graphitic nanoribbons.
Xiaoting Jia,Mario Hofmann,Vincent Meunier,Bobby G. Sumpter,Jessica Campos-Delgado,José M. Romo-Herrera,Hyungbin Son,Ya-Ping Hsieh,Alfonso Reina,Jing Kong,Mauricio Terrones,Mildred S. Dresselhaus +11 more
TLDR
This work has demonstrated an efficient edge-reconstruction process, at the atomic scale, for graphitic nanoribbons by Joule heating, which involves point defect annealing and edge reconstruction.Abstract:
Graphene nanoribbons can exhibit either quasi-metallic or semiconducting behavior, depending on the atomic structure of their edges. Thus, it is important to control the morphology and crystallinity of these edges for practical purposes. We demonstrated an efficient edge-reconstruction process, at the atomic scale, for graphitic nanoribbons by Joule heating. During Joule heating and electron beam irradiation, carbon atoms are vaporized, and subsequently sharp edges and step-edge arrays are stabilized, mostly with either zigzag- or armchair-edge configurations. Model calculations show that the dominant annealing mechanisms involve point defect annealing and edge reconstruction.read more
Citations
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Graphene and Graphene Oxide: Synthesis, Properties, and Applications
TL;DR: An overview of the synthesis, properties, and applications of graphene and related materials (primarily, graphite oxide and its colloidal suspensions and materials made from them), from a materials science perspective.
Journal ArticleDOI
Raman spectroscopy in graphene
TL;DR: In this article, the authors discuss the first-order and double resonance Raman scattering mechanisms in graphene, which give rise to the most prominent Raman features and give special emphasis to the possibility of using Raman spectroscopy to distinguish a monolayer from few-layer graphene stacked in the Bernal configuration.
Journal ArticleDOI
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
Fengnian Xia,Han Wang,Yichen Jia +2 more
TL;DR: Black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, is reintroduced to the layered-material family and shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Journal ArticleDOI
Graphene-Based Materials: Synthesis, Characterization, Properties, and Applications
Xiao Huang,Zongyou Yin,Shixin Wu,Xiaoying Qi,Qiyuan He,Qichun Zhang,Qingyu Yan,Freddy Yin Chiang Boey,Hua Zhang +8 more
TL;DR: The synthesis, characterization, properties, and applications of graphene-based materials are discussed and the promising properties together with the ease of processibility and functionalization make graphene- based materials ideal candidates for incorporation into a variety of functional materials.
References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
Journal ArticleDOI
Experimental observation of the quantum Hall effect and Berry's phase in graphene
TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal Article
Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.