Journal ArticleDOI
Device scaling limits of Si MOSFETs and their application dependencies
David J. Frank,R.H. Dennard,E. J. Nowak,Paul M. Solomon,Yuan Taur,Hon-Sum Philip Wong +5 more
- Vol. 89, Iss: 3, pp 259-288
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TLDR
The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.Abstract:
This paper presents the current state of understanding of the factors that limit the continued scaling of Si complementary metal-oxide-semiconductor (CMOS) technology and provides an analysis of the ways in which application-related considerations enter into the determination of these limits. The physical origins of these limits are primarily in the tunneling currents, which leak through the various barriers in a MOS field-effect transistor (MOSFET) when it becomes very small, and in the thermally generated subthreshold currents. The dependence of these leakages on MOSFET geometry and structure is discussed along with design criteria for minimizing short-channel effects and other issues related to scaling. Scaling limits due to these leakage currents arise from application constraints related to power consumption and circuit functionality. We describe how these constraints work out for some of the most important application classes: dynamic random access memory (DRAM), static random access memory (SRAM), low-power portable devices, and moderate and high-performance CMOS logic. As a summary, we provide a table of our estimates of the scaling limits for various applications and device types. The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications.read more
Citations
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Journal ArticleDOI
Modulation of electron transfer in Si/SiO 2 /HfO 2 /Graphene by the HfO 2 thickness
TL;DR: In this paper, the effect of variation of the thickness of the HfO2 layer in Si/SiO2/HfO 2/Graphene heterostructures on the density of carrier transferred to graphene was studied by Raman spectroscopy.
Journal ArticleDOI
Evolution of Tunnel Field Effect Transistor for Low Power and High Speed Applications: A Review
Proceedings ArticleDOI
Emerging nanoelectronics: multi-functional nanowires
Adrian M. Ionescu,V. Pott,Serge Ecoffey,Santanu Mahapatra,Kirsten E. Moselund,P. Dainesi,K. Buchheit,M. Mazza +7 more
TL;DR: In this paper, the authors demonstrate that a silicon-on-insulator (SOI) nanowire technological platform could be a realistic approach to address the development of various types of multifunctional devices.
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Design of ion-implanted MOSFET's with very small physical dimensions
TL;DR: This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/.