Journal ArticleDOI
Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices
TLDR
In this paper, various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs).Abstract:
Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides.read more
Citations
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Journal ArticleDOI
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang,Maja Remškar,Rusen Yan,Vladimir Protasenko,Kristof Tahy,Soo Doo Chae,Pei Zhao,Aniruddha Konar,Huili,Xing,Alan Seabaugh,Debdeep Jena +11 more
TL;DR: In this paper, the authors reported the realization of field effect transistors (FETs) made with chemically synthesized layered two dimensional (2D) crystal semiconductor WS2, which demonstrated ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation.
Journal ArticleDOI
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
Wan Sik Hwang,Maja Remškar,Rusen Yan,Vladimir Protasenko,Kristof Tahy,Soo Doo Chae,Pei Zhao,Aniruddha Konar,Huili Xing,Alan Seabaugh,Debdeep Jena +10 more
TL;DR: In this article, the authors reported the realization of field effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2, which demonstrated ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation.
Journal ArticleDOI
Thermal Atomic Layer Etching of Titanium Nitride Using Sequential, Self-Limiting Reactions: Oxidation to TiO2 and Fluorination to Volatile TiF4
Younghee Lee,Steven M. George +1 more
TL;DR: The thermal atomic layer etching (ALE) of TiN was demonstrated using a new etching mechanism based on sequential, self-limiting oxidation and fluorination reactions as discussed by the authors, where the oxidant was either O3 or H2O2, and the fluorination reactant was hydrogen fluoride (HF) derived from HF-pyridine.
Journal ArticleDOI
The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition
Jungmin Moon,Hyun Jun Ahn,Yujin Seo,Tae In Lee,Choong-Ki Kim,Il Cheol Rho,Choon Hwan Kim,Wan Sik Hwang,Byung Jin Cho +8 more
TL;DR: In this article, the effective work function (eWF) of Al-doped titanium carbide (TiAlC) metal electrodes prepared by atomic layer deposition showed a strong dependence on the underlying gate dielectrics.
Journal ArticleDOI
Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application
Kamale Tuokedaerhan,R. Tan,Kuniyuki Kakushima,Parhat Ahmet,Yoshinori Kataoka,A. Nishiyama,Nobuyuki Sugii,H. Wakabayashi,Kazuo Tsutsui,K. Natori,Takeo Hattori,Hiroshi Iwai +11 more
TL;DR: In this paper, a sputtering process using multi-stacking of carbon and metal thin films with subsequent annealing process to reactively form metal carbides (TiC, TaC, and W2C) has been presented.
References
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Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
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Proceedings ArticleDOI
Dipole Moment Model Explaining nFET V t Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics
P. Sivasubramani,T. S. Böscke,Jiacheng Huang,Chadwin D. Young,Paul Kirsch,Siddarth A. Krishnan,Manuel Quevedo-Lopez,S. Govindarajan,B.S. Ju,H.R. Harris,Daniel J. Lichtenwalner,Jesse S. Jur,Angus I. Kingon,Jiyoung Kim,Bruce E. Gnade,Robert M. Wallace,Gennadi Bersuker,Byoung Hun Lee,Rajarao Jammy +18 more
TL;DR: In this article, a dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented.
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