Journal ArticleDOI
Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$ -Based RRAM Devices
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TLDR
In this paper, the temperature instability of HfOx-based resistive switching memory is investigated and it is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease.Abstract:
In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 °C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.read more
Citations
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Journal ArticleDOI
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
TL;DR: Recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.
PatentDOI
Resistance random access memory
TL;DR: In this article, the authors classify resistive random access memory (RRAM) devices into four categories according to different resistive switching mechanisms, from which the four elements are (1) anion-type RRAM: redox reaction and migration of oxygen ions, (2) cation-type RDAM: the stretch of C C C bond lengths due to oxygen and hydrogen dual ions, and (3) oxide-based electrode: oxygen accumulation in oxide based electrode.
Journal ArticleDOI
Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$ -Based RRAM Devices
Christian Walczyk,Damian Walczyk,Thomas Schroeder,T. Bertaud,Malgorzata Sowinska,M. Lukosius,Mirko Fraschke,Dirk Wolansky,Bernd Tillack,Enrique Miranda,Ch. Wenger +10 more
TL;DR: In this article, the authors investigated the conduction mechanism and the resistive switching behavior as a function of temperature in 1 × μm2 TiN/HfO2/Ti/TiN MIM memory devices in a 0.25-μm complementary metal-oxide-semiconductor technology.
Journal ArticleDOI
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.
Hao Jiang,Lili Han,Lili Han,Peng Lin,Zhongrui Wang,Moon-Hyung Jang,Qing Wu,Mark Barnell,Jianhua Yang,Huolin L. Xin,Qiangfei Xia +10 more
TL;DR: A Ta/HfO2/Pt memristor with fast switching speed, record high endurance (120 billion cycles) and reliable retention, and directly observed a sub-10 nm Ta-rich and O-deficient conduction channel within the HfO1 layer that is responsible for the switching.
Journal ArticleDOI
$\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
TL;DR: In this paper, a significantly improved uniformity of device parameters, such as set voltage, reset voltage, and HRS and LRS resistance distributions, is successfully demonstrated on HfOx/TiOx multilayer (ML)-based resistive switching devices.
References
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Book
Introduction to solid state physics
TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Proceedings ArticleDOI
Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
Hong-Ji Lee,Pang-Shiu Chen,Tain-Shun Wu,Yu-Hsiu Chen,Ching-Hua Wang,P.J. Tzeng,C. H. Lin,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +9 more
TL;DR: In this paper, a novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mum CMOS technology, which uses a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, and excellent memory performances such as low operation current (down to 25 muA), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (>106 cycles) have been demonstrated in the memory device.
Journal ArticleDOI
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim,Sunae Seo,Seung-Eon Ahn,Dongseok Suh,Myoung-Jae Lee,B.-H. Park,I. K. Yoo,I. G. Baek,Hyeok Kim,E. K. Yim,J. E. Lee,Park Soon,Hyun-Suk Kim,U-In Chung,J. T. Moon,B. I. Ryu +15 more
TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.