Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Multispectral imaging with vertical silicon nanowires
Hyunsung Park,Kenneth B. Crozier +1 more
TL;DR: The demonstration of a compact multispectral imaging system that uses vertical silicon nanowires to realize a filter array that is highly sensitive to vegetation and furthermore enables imaging through objects opaque to the eye.
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Heteroepitaxial ultrafine wire‐like growth of InAs on GaAs substrates
TL;DR: In this article, the authors demonstrate heteroepitaxial ultrafine wire-like growth of InAs with diameters less than 20 nm on SiO2-patterned GaAs substrates using metalorganic vapor phase epitaxy.
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Synthesis and Characterization of SiC Nanowires through a Reduction−Carburization Route
Jingjing Hu,Q. Y. Lu,Kaibin Tang,Bin Deng,R. R. Jiang,Yitai Qian,Weicao Yu,Guangfeng Zhou,and Xiaomeng Liu,J. X. Wu +9 more
TL;DR: In this paper, a reduction−carburization route was used to synthesize 3C−SiC nanowires by using silicon powders and tetrachloride (CCl4) as Si and C sources, and metallic Na as the reductant at 700 °C.
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Synthesis and Properties of Single-Crystal FeSi Nanowires
TL;DR: The chemical synthesis of free-standing single-crystal nanowires (NWs) of FeSi, the only transition-metal Kondo insulator and the host structure for ferromagnetic semiconductor Fe(x)Co(1-x)Si, is reported for the first time.
Journal ArticleDOI
Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface
TL;DR: Using a hydrogen-terminated Si surface as a substrate, this article used the vapor-liquid-solid mechanism to grow Si nanowiskers along the direction of the vapor flow.
References
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The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more