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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires

TL;DR: A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism for nanowires is presented in this paper, where most of the concepts may be applicable to whiskers, nanotubes, and other unidirectional growth.
Journal ArticleDOI

Position-controlled [100] InP nanowire arrays

TL;DR: In this paper, the growth of vertically standing zincblende InP nanowire arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy was investigated by electron beam lithography.
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Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

TL;DR: In this paper, energy-dispersive x-ray spectroscopy shows that the Ti-containing nanoparticles remain at the tip of the growing wires and the estimated diffusion coefficient of Si in TiSi2 is consistent with the catalyzing nanoparticle remaining in the solid phase during nanowire growth.
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Semiconductor nanowire lasers

TL;DR: In this paper, the authors explore the latest advancements in the development of nanowire lasers and offer their perspective on future improvements and trends, and discuss fundamental material considerations and the latest, most effective materials for nanowires.
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Face-selective electrostatic control of hydrothermal zinc oxide nanowire synthesis

TL;DR: In this paper, a thermodynamics-based model was introduced to explain the underlying growth inhibition mechanism by means of the competitive and face-selective electrostatic adsorption of non-zinc complex ions at alkaline conditions.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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