Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
Citations
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Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts
Brendan M. Kayes,Michael A. Filler,Morgan C. Putnam,Michael D. Kelzenberg,Nathan S. Lewis,Harry A. Atwater +5 more
TL;DR: In this paper, vertically oriented Si wires with diameters of 1.5 µm and lengths of up to 75 µm were grown over areas > 1 cm^2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid solid growth with either Au or Cu as the growth catalyst.
Journal ArticleDOI
Nonaqueous Synthesis of CdS Nanorod Semiconductor
TL;DR: A solvent-coordinating molecular template mechanism to synthesize one-dimensional nanostructure CdS was speculated in the equation below as discussed by the authors, where the solvent molecule ethylenediamine played an important role.
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Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties
TL;DR: In this paper, the preparation of 20 ± 5 nm diameter Si nanowires and the electrical characterization of Si-nanowire devices were presented, which were grown at 450−500 °C on solid substrates via the vaporization process.
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Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals.
Tobias Hanrath,Brian A. Korgel +1 more
TL;DR: The Ge nanowires were characterized using a range of techniques, including XPS, XRD, high-resolution TEM and SEM, nanometer-scale EDS mapping, and DTA, and large Ge particulates formed due to unfavorable growth kinetics.
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Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection
TL;DR: The external quantum efficiency and photoresponsivity profiles of the device showed a broad spectral response from the visible to the infrared region, indicating potential applications as a broad band photovoltaic cell or a visible-infrared dual-band photodetector.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more