Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
Citations
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Au-free epitaxial growth of InAs nanowires.
Bernhard Mandl,Julian Stangl,Thomas Mårtensson,Anders Mikkelsen,Jessica Eriksson,Lisa Karlsson,Gerrit E. W. Bauer,Lars Samuelson,W. Seifert +8 more
TL;DR: In this paper, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined from high-resolution X-ray diffraction, and the structure of III-V nanowires is analyzed.
Journal ArticleDOI
Germanium nanowire epitaxy: shape and orientation control.
TL;DR: Epitaxial growth of nanowires along the 111 directions was obtained on Ge(111), Ge(110, Ge(001), and heteroepitaxia Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition.
Patent
Systems, methods, and devices using stretchable or flexible electronics for medical applications
Roozbeh Ghaffari,Bassel de Graff,Gilman Callsen,William J. Arora,Benjamin Schlatka,Eugene Kuznetsov +5 more
TL;DR: In this paper, a system, devices and methods are presented that integrate stretchable or flexible circuitry, including arrays of active devices for enhanced sensing, diagnostic, and therapeutic capabilities, enabling conformal sensing contact with tissues of interest such as the inner wall of a lumen, a nerve bundle, or the surface of the heart.
Journal ArticleDOI
A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane
G.A. Bootsma,H.J. Gassen +1 more
TL;DR: In this article, the impurity-induced nucleation and the kinetics of the growth of filamentary crystals of silicon and germanium from silane and Germane respectively have been studied in a closed system.
Journal ArticleDOI
Synthesis and low-temperature photoluminescence properties of SnO2 nanowires and nanobelts.
Suhua Luo,Suhua Luo,Jiyang Fan,Jiyang Fan,Weili Liu,Miao Zhang,Zhitang Song,Chenglu Lin,Xinglong Wu,Xinglong Wu,Paul K. Chu +10 more
TL;DR: The SnO2 nanobelts show similar photoluminescence behaviours and the origin of the luminescence is discussed, and the vapour-liquid-solid growth mechanism is proposed.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more