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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires

TL;DR: In this paper, the role of strain-induced reduction in surface free energy is discussed as a possible factor contributing to the evolution of GaAs nanowires, and it is attributed to growth instabilities resulting from equivalent surface free energies for 〈110〉 growth directions.
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Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the vapour?solid?solid mechanism

TL;DR: In this paper, high-resolution transmission electron microscopy analysis reveals significant new properties of the nanowires obtained, which have the peculiarity of successively switching the silicon structure from diamond to the wurtzite phase along the growth direction.
Journal ArticleDOI

Growth and electrical transport of germanium nanowires

TL;DR: In this paper, single crystalline germanium nanowires were synthesized from gold nanoparticles based on a vapor-liquid-solid growth mechanism using argon as a carrier gas.
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Molecular Dynamics Study of the Catalyst Particle Size Dependence on Carbon Nanotube Growth

TL;DR: The molecular dynamics method, based on an empirical potential energy surface, was used to study the effect of catalyst particle size on the growth mechanism and structure of single-walled carbon nanotubes (SWNTs) and found that large catalyst particles, which contain at least 20 iron atoms, nucleate SWNTs that have a far better tubular structure than SW NTs nucleated from smaller clusters.
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Metal oxide nanoscience and nanotechnology for chemical sensors

TL;DR: In this article, the capabilities and development prospects of nanostructured metal oxides (MOX) representing the most versatile and richest class of materials in terms of electronic structure and structural, chemical, and physical properties are discussed.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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