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Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

TL;DR: Two approaches to mitigate nonuniform doping in phosphorus-doped Si nanowires grown by the vapor-liquid-solid process are demonstrated; the growth conditions can be modified to suppress active surface doping and thermal annealing following growth can be used to produce more uniform doping profiles.
Journal ArticleDOI

A universal approach for the synthesis of two-dimensional binary compounds

TL;DR: In this paper, a general approach for synthesizing thin layers of two-dimensional binary compounds was proposed, and applied to obtain high quality, epitaxial MoS2 films, and extended the principle to the synthesis of a wide range of other materials including transition metal sulphides, selenides, tellurides, and nitrides.
Journal ArticleDOI

Atomic Layer Deposition of Lead Sulfide Quantum Dots on Nanowire Surfaces

TL;DR: Photoluminescence measurements on the quantum dot/nanowire composites show a blue shift when the number of ALD cycles is decreased, suggesting a route to fabricate unique three-dimensional nanostructured devices such as solar cells.
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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

TL;DR: This work demonstrates the successful growth of free-standing, two-dimensional InSb nanosheets on one- dimensional InAs nanowires by molecular-beam epitaxy and shows a clear ambipolar behavior and a high electron mobility.
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Single-crystal films of silicon on insulators

TL;DR: A good deal of research has been devoted to silicon films on single-crystal sapphire substrates as mentioned in this paper, with particular attention paid to the orientation relationship between the silicon and the substrate.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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