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Journal ArticleDOI

Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Citations
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Semiconductor Wires and Ribbons for High- Performance Flexible Electronics

TL;DR: Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts.
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Ti3C2 MXenes modified with in situ grown carbon nanotubes for enhanced electromagnetic wave absorption properties

TL;DR: In this paper, a hierarchical sandwich microstructure of two-dimensional (2D) Ti3C2Tx MXene flakes is proposed for the design of a novel electromagnetic wave absorber, which not only provides an effective route for extending further the applications of 2D MXene materials in the field of electromagnetic wave absorption.
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Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth

TL;DR: A review of the similarities between all of these catalytic growth processes in an attempt to help stimulate a more universal understanding of the phenomenon can be found in this article, where a precis of the materials from which nanowires have been formed and then a discussion of mechanistic aspects.
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Growth kinetics and crystal structure of semiconductor nanowires

TL;DR: In this article, a theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of semiconductors is possible.
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Review of gallium-oxide-based solar-blind ultraviolet photodetectors

TL;DR: A comprehensive review of solar-blind photodetectors based on gallium oxide (Ga2O3) materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys is presented in this paper.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI

Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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