Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Structural characterization of indium oxide nanostructures: a Raman analysis
Olivia M. Berengue,Ariano De Giovanni Rodrigues,Cleocir José Dalmaschio,Alexandre J. C. Lanfredi,Edson R. Leite,Adenilson J. Chiquito +5 more
TL;DR: In this paper, structural and Raman spectroscopy measurements of pure and Sn-doped In2O3 nanowires were performed to obtain the phonon modes and confirm compositional and structural information given by structural characterization.
Journal ArticleDOI
Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions.
TL;DR: This review focuses on the vapor phase, highlighting the most influential achievements along with a historical perspective, and features the variety of structures and materials that can be synthesized in the nanowire form.
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Nanocrystal and Nanowire Synthesis and Dispersibility in Supercritical Fluids
TL;DR: In this paper, the authors review major breakthroughs in the rapidly developing research area of nanomaterial synthesis in supercritical fluids focusing on both the fundamental science and processing advantages in the application areas of separations, assembly and scale-up of synthesis.
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Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
Anna Fontcuberta i Morral,D. Spirkoska,Jordi Arbiol,Matthias Heigoldt,J. R. Morante,Gerhard Abstreiter +5 more
TL;DR: The chiral stationary phase for high-performance liquid chromatography showed good chiral recognition ability towards various racemates, including Na6(CO3)(SO4)2, Na2SO4, and Na2CO3.
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Screw Dislocation-Driven Epitaxial Solution Growth of ZnO Nanowires Seeded by Dislocations in GaN Substrates
Stephen A. Morin,Song Jin +1 more
TL;DR: This work intentionally utilizes screw dislocations from defect-rich gallium nitride (GaN) thin films to propagate dislocation-driven growth, demonstrating epitaxial growth of zinc oxide (ZnO) nanowires directly from aqueous solution.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more