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Vapor‐liquid‐solid mechanism of single crystal growth

R. S. Wagner, +1 more
- 01 Mar 1964 - 
- Vol. 4, Iss: 5, pp 89-90
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.

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Polarization dependence of light emitted from GaAs p‐n junctions in quantum wire crystals

TL;DR: In this paper, the photoluminescence measurement showed that nanowiskers with p-n junctions have the same confinement effect as one-dimensional quantum wires, the average effective width of which is about 30 nm.
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Ion beam doping of semiconductor nanowires

TL;DR: In this paper, the authors use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: ion implantation, which is an unsolved problem and an extremely difficult task if using such a growth mechanism.
Journal ArticleDOI

Controlling heterojunction abruptness in VLS-grown semiconductor nanowires via in situ catalyst alloying.

TL;DR: The present approach of alloying to control solute solubilities in the liquid catalyst may be extended to increasing the sharpness of axial dopant profiles, for example, in Si-Ge pn-heterojunction nanowires which is important for such applications as nanowire tunnel field effect transistors or in Si p-junction Nanowires.
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Flower-shaped ZnO nanostructures obtained by cyclic feeding chemical vapour deposition: structural and optical properties

TL;DR: Flower-shaped ZnO nanostructures grown on Si(100) and Si(111) substrates by cyclic feeding chemical vapour deposition without the use of a metal catalyst showed sharp and strong UV emission at 378 nm and broad and weak green emission at 520 nm, indicating a good crystal quality and few structural defects.
References
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Journal ArticleDOI

The influence of dislocations on crystal growth

TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals

TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
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