Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
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Controlled growth of Si nanowire arrays for device integration.
TL;DR: By controlling various aspects of nanowire growth, these methods will enable their efficient and economical incorporation into devices to enable their practical integration into devices.
Journal ArticleDOI
Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor
TL;DR: In this paper, the authors demonstrate a bottom-up integration of a semiconductor 1D nanowire, using zinc oxide (ZnO) as an example, to obtain a vertical surround-gate field effect transistor (VSG-FET).
Patent
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
Arun Majumdar,Ali Shakouri,Timothy D. Sands,Peidong Yang,Samuel S. Mao,Richard E. Russo,H. Feick,Eicke R. Weber,Hannes Kind,Michael H. Huang,Haoquan Yan,Yiying Wu,Rong Fan +12 more
TL;DR: One-dimensional nanostructures have uniform diameters of less than approximately 200 nm and are referred to as "nanowires" as mentioned in this paper, which include single-crystalline materials having different chemical compositions.
Journal ArticleDOI
Growth and optical properties of nanometer‐scale GaAs and InAs whiskers
Kenji Hiruma,Masamitsu Yazawa,Toshio Katsuyama,Kensuke Ogawa,Keiichi Haraguchi,Masanari Koguchi,Hiroshi Kakibayashi +6 more
TL;DR: In this paper, the growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15-40 nm and about 2 μm long are reviewed and discussed.
Journal ArticleDOI
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires
TL;DR: In this article, it was shown that there exists a radius-dependent critical layer thickness below which no interfacial dislocation should be introduced, and that this critical thickness becomes infinite for radii less than some critical value, below which arbitrarily thick coherent layers should be obtainable.
References
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The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
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Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
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Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more