Journal ArticleDOI
Vapor‐liquid‐solid mechanism of single crystal growth
R. S. Wagner,W. C. Ellis +1 more
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This article is published in Applied Physics Letters.The article was published on 1964-03-01. It has received 6579 citations till now. The article focuses on the topics: Vapor–liquid–solid method & Seed crystal.read more
Citations
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Journal ArticleDOI
Alignment of semiconductor nanowires using ion beams.
Christian Borschel,Raphael Niepelt,Sebastian Geburt,Christoph Gutsche,I. Regolin,Werner Prost,Franz-Josef Tegude,D. Stichtenoth,Daniel Schwen,Carsten Ronning +9 more
TL;DR: Gallium arsenide nanowires are grown on 100 GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35 degrees off the substrate surface, and defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending.
Journal ArticleDOI
Morphology Control in the Vapor−Liquid−Solid Growth of SiC Nanowires
TL;DR: In this paper, the diameter of the SiC nanowires is strongly related to the pressure and pressure variation rate of the source species, and the diameter can be manipulated by varying the pressure.
Book ChapterDOI
Optical Properties of Semiconductors
TL;DR: In this article, the authors introduce the Maxwell's equations about the electromagnetic field and the Hamiltonian of electron in the electromagnetic fields from which they obtain the formula for light-matter interaction which forms the base for the optical electronics.
Journal ArticleDOI
Study on the performance of different nano-species used for surface modification of carbon fiber for interface strengthening
Ajitanshu Vedrtnam,S. P. Sharma +1 more
TL;DR: In this article, a review on the performance of carbon nanotubes, zinc oxide (ZnO) nanowalls, nanowires, and other nano-species, modified carbon fiber reinforced polymer composites is presented.
Journal ArticleDOI
On the formation of Si nanowires by molecular beam epitaxy
TL;DR: In this paper, the authors describe molecular beam epitaxy growth experiments of Si nanowires under ultra-high vacuum conditions and compare the results with other growth techniques, including the role of the metal seed, the morphology of the nanwires and their aspect ratio.
References
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Journal ArticleDOI
The influence of dislocations on crystal growth
TL;DR: In fact, the existence of a critical finite supersaturation for further growth has only been established for a few materials, and then for individual faces of individual crystals, being different from case to case as discussed by the authors.
Journal ArticleDOI
Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4
TL;DR: In this article, the basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in detail, including the hydrogen reduction of silicon tetrachloride appropriately doped with or.
Journal ArticleDOI
Growth and Defect Structure of Sapphire Microcrystals
W. W. Webb,W. D. Forgeng +1 more
TL;DR: In this article, small euhedral crystals of α-Al2O3 (sapphire) were observed following oxidation of aluminum and an aluminum alloy in wet hydrogen at high temperatures.
Journal ArticleDOI
Morphology and Growth Mechanism of Silicon Ribbons
R. S. Wagner,R. G. Treuting +1 more